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Ryabchun, Sergey; Tong, Cheuk-Yu Edward; Paine, Scott; Lobanov, Yury; Blundell, Raymond; Goltsman, Gregory |
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Title |
Temperature resolution of an HEB receiver at 810 GHz |
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2009 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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19 |
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3 |
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293-296 |
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Keywords |
HEB mixer |
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We present the results of direct measurements of the temperature resolution of an HEB receiver operating at 810 GHz, in both continuum and spectroscopic modes. In the continuum mode, the input of the receiver was switched between black bodies with different physical temperatures. With a system noise temperature of around 1100 K, the receiver was able to resolve loads which differed in temperature by about 1 K over an integration time of 5 seconds. This resolution is significantly worse than the value of 0.07 K given by the radiometer equation. In the spectroscopic mode, a gas cell filled with carbonyl sulphide (OCS) gas was used and the emission line at 813.3537060 GHz was measured using the receiver in conjunction with a digital spectrometer. From the observed spectra, we determined that the measurement uncertainty of the equivalent emission temperature was 2.8 K for an integration time of 0.25 seconds and a spectral resolution of 12 MHz, compared to a 1.4 K temperature resolution given by the radiometer equation. This relative improvement is due to the fact that at short integration times the contribution from 1/f noise and drift are less dominant. In both modes, the temperature resolution was improved by about 40% with the use of a feedback loop which adjusted the level of an injected microwave radiation to maintain a constant operating current of the HEB mixer. This stabilization scheme has proved to be very effective to keep the temperature resolution of the HEB receiver to close to the theoretical value given by the radiometer equation. |
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636 |
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Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N. |
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Title |
Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers |
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Journal Article |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
Issue |
2 |
Pages |
168-171 |
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Keywords |
NbN HEB mixers |
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We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz. |
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Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer |
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2003 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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13 |
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2 |
Pages |
164-167 |
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NbN HEB mixer |
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In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions. |
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341 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Paine, Scot.t. N.; Patt, Ferdinand; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene |
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Superconductive hot-electron bolometer mixer receiver for 800 GHz operation |
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Miscellaneous |
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Year |
2000 |
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IEEE Trans. Microwave Theory and Techniques |
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IEEE Trans. Microwave Theory and Techniques |
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48 |
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4 |
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683-689 |
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RPLAB @ s @ Kawamura_superconductivehot-electron |
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424 |
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