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Author Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Semenov, A. D.; Sergeev, A. V.
Title Processes of electron-phonon interaction in thin YBaCuO films Type Journal Article
Year 1991 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.
Volume 185-189 Issue Pages 1371-1372
Keywords YBCO HTS detectors
Abstract The ultrafast voltage response of YBaCuO films to laser radiation is studied and compared with previously investigated quasiparicles response to radiation of submillimeter wavelength range. Voltage shift under the visible light radiation has two components. Picosecond response realized as suppression superconductivity by nonequilibrium excess quasiparticles, response time is determined by quasiparticles recombination rate. Nanosecond response is probably due to bolometric effect.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1676
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Author Gol'tsman, G. N.; Kouminov, P.; Goghidze, I.; Gershenzon, E. M.
Title Nonequilibrium kinetic inductive response of YBaCuO thin films to low-power laser pulses Type Journal Article
Year 1994 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.
Volume 235-240 Issue Pages 1979-1980
Keywords YBCO HTS KID
Abstract Transient non-equilibrium kinetic inductive voltage response of YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 μm and 1.5 μm wavelength has been revealed. By increasing the sensitivity of 100 ps resolution time registration system and diminishing light intensity (fluence 0.1-1 μJ2/cm2) and transport current (density j≤105 A/cm2) we observed a perculiar bipolar signal form with nearly equal amplitudes of each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively of the same form as the response in the resistive and normal states: nonequilibrium picosecond scale component followed by bolometric nanosecond. Nonequilibrium response is interpreted as suppression of order parameter by excess of quasiparticles followed by a change in resistance in the resistive state and kinetic inductance in superconductive state.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1634
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Author Karasik, B.S.; Milostnaya, I.I.; Zorin, M.A.; Elantev, A.I.; Gol'tsman, G.N.; Gershenzon, E.M.
Title Subnanosecond S-N and N-S switching of YBCO film induced by current pulse Type Journal Article
Year 1994 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.
Volume 235-240 Issue Pages 1981-1982
Keywords YBCO HTS switches
Abstract A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1633
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Author Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M.
Title AC losses and submillimeter absorption in single crystals La2CuO4 Type Journal Article
Year 1990 Publication Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 165-166 Issue Pages 1269-1270
Keywords metal-dielectric-La2Cu04
Abstract The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1686
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title Electron–phonon interaction in disordered conductors Type Journal Article
Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter
Volume 263-264 Issue Pages 190-192
Keywords disordered conductors, electron-phonon interaction
Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1765
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Author Gol’tsman, G. N.; Gershenzon, E. M.
Title Phonon-cooled hot-electron bolometric mixer: overview of recent results Type Journal Article
Year 1999 Publication Appl. Supercond. Abbreviated Journal Appl. Supercond.
Volume 6 Issue 10-12 Pages 649-655
Keywords NbN HEB mixers
Abstract The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0964-1807 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1564
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Author Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E.
Title Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies Type Journal Article
Year 2001 Publication Infrared Physics & Technology Abbreviated Journal Infrared Physics & Technology
Volume 42 Issue 1 Pages 41-47
Keywords NbN HEB mixers, anti-reflection coating
Abstract Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1350-4495 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1548
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M.
Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics
Volume 41 Issue 5 Pages 408-414
Keywords submillimeter waves, transmission
Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no
Call Number Serial 1611
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Author Gershenzon, E. M.; Goltsman, G. N.
Title Zeeman effect in excited-states of donors in germanium Type Journal Article
Year 1972 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 6 Issue 3 Pages 509
Keywords Ge, donors, Zeeman effect
Abstract
Address
Corporate Author Thesis
Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1737
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title Investigation of excited donor states in GaAs Type Journal Article
Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 7 Issue 10 Pages 1248-1250
Keywords GaAs, excited donor states
Abstract
Address
Corporate Author Thesis
Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1733
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Author Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M.
Title Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1142-1148
Keywords energy spectrum, Ge, magnetic field
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1722
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
Title Germanium hot-electron narrow-band detector Type Journal Article
Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics
Volume 16 Issue 8 Pages 1346
Keywords Ge HEB detectors
Abstract
Address
Corporate Author Thesis
Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1741
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Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors
Volume Issue Pages 631-634
Keywords Ge, donor excited states
Abstract
Address Amsterdam
Corporate Author Thesis
Publisher North-Holland Publishing Co. Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1732
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Author Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N.
Title Population of excited-states of small admixtures in germanium Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1154-1159
Keywords Ge, excited states, admixtures
Abstract
Address
Corporate Author Thesis
Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1723
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I.
Title Effect of a strong magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1978 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 11 Issue 12 Pages 1395-1397
Keywords InSb, spectrum of donors, strong magnetic field
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1725
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