| |
Records |
Links  |
|
Author |
Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. |
|
| |
Title |
Superconducting microstructures with high impedance |
Type |
Journal Article |
| |
Year |
2020 |
Publication |
Phys. Solid State |
Abbreviated Journal |
Phys. Solid State |
|
| |
Volume |
62 |
Issue |
9 |
Pages |
1539-1542 |
|
| |
Keywords |
superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance |
|
| |
Abstract |
The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1063-7834 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1789 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
|
| |
Title |
Noise equivalent temperature difference of a superconducting integrated terahertz receiver |
Type |
Journal Article |
| |
Year |
2009 |
Publication |
J. Commun. Technol. Electron. |
Abbreviated Journal |
J. Commun. Technol. Electron. |
|
| |
Volume |
54 |
Issue |
6 |
Pages |
716-720 |
|
| |
Keywords |
SIS mixer SIR NETD, FFO, harmonic mixer |
|
| |
Abstract |
The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1064-2269 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1400 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
|
| |
Title |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
Type |
Journal Article |
| |
Year |
1986 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
| |
Volume |
20 |
Issue |
1 |
Pages |
99-103 |
|
| |
Keywords |
n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
|
| |
Abstract |
В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1759 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
|
| |
Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
Type |
Journal Article |
| |
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
| |
Volume |
17 |
Issue |
10 |
Pages |
1873-1876 |
|
| |
Keywords |
compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1763 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
|
| |
Title |
Response of graphene based gated nanodevices exposed to THz radiation |
Type |
Conference Article |
| |
Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
|
| |
Volume |
103 |
Issue |
|
Pages |
10003 (1 to 2) |
|
| |
Keywords |
graphene field-effect transistor, FET |
|
| |
Abstract |
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
2100-014X |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1350 |
|
| Permanent link to this record |
