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Годунова, Е. К.; Левин, В. И. |
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Title |
Некоторые качественные вопросы теплопроводности |
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1966 |
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Ж. вычисл. матем. и матем. физ. |
Abbreviated Journal |
Ж. вычисл. матем. и матем. физ. |
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6 |
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6 |
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1097-1103 |
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mathematics, temperature distribution, rod |
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Одногорбое распределение останется одногорбым; Duplicated as 1701 |
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1700 |
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Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory |
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Title |
Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors |
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2020 |
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Graphene and 2dm Virt. Conf. |
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Graphene and 2DM Virt. Conf. |
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single layer graphene, SLG, CVD, plasmons, FET |
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Abstract |
Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. |
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Grenoble, France |
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Graphene and 2dm Virtual Conference & Expo |
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1743 |
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Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
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Title |
Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer |
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Conference Article |
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2005 |
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Proc. PIERS |
Abbreviated Journal |
Proc. PIERS |
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1 |
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5 |
Pages |
587-590 |
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NbN HEB mixers |
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In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. |
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Hangzhou, China |
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1931-7360 |
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Progress In Electromagnetics Research Symposium |
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1482 |
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Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
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Title |
New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
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Journal Article |
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2001 |
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J. Vac. Sci. Technol. B |
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J. Vac. Sci. Technol. B |
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19 |
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6 |
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2766-2769 |
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NbN SSPD, SNSPD |
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A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. |
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0734211X |
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1542 |
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Gayduchenko, I. A.; Fedorov, G. E.; Ibragimov, R. A.; Stepanova, T. S.; Gazaliev, A. S.; Vysochanskiy, N. A.; Bobrov, Y. A.; Malovichko, A. M.; Sosnin, I. M.; Bobrinetskiy, I. I. |
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Synthesis of single-walled carbon nanotube networks using monodisperse metallic nanocatalysts encapsulated in reverse micelles |
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Journal Article |
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Year |
2016 |
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Chem. Ind. Belgrade |
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Chem. Ind. Belgrade |
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70 |
Issue |
1 |
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1-8 |
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Keywords |
carbon nanotubes, CNT, reverse micelles |
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We report on a method of synthesis of single-walled carbon nanotubes percolated networks on silicon dioxide substrates using monodisperse Co and Ni catalyst. The catalytic nanoparticles were obtained by modified method of reverse micelles of bis-(2-ethylhexyl) sulfosuccinate sodium in isooctane solution that provides the nanoparticle size control in range of 1 to 5 nm. The metallic nanoparticles of Ni and Co were characterized using transmission electron microscopy (TEM) and atomic-force microscopy (AFM). Carbon nanotubes were synthesized by chemical vapor deposition of CH4/H2 composition at temperature 1000 °С on catalysts pre-deposited on silicon dioxide substrate. Before temperature treatment during the carbon nanotube synthesis most of the catalyst material agglomerates due to magnetic forces while during the nanotube growth disintegrates into the separate nanoparticles with narrow diameter distribution. The formed nanotube networks were characterized using AFM, scanning electron microscopy (SEM) and Raman spectroscopy. We find that the nanotubes are mainly single-walled carbon nanotubes with high structural perfection up to 200 μm long with diameters from 1.3 to 1.7 nm consistent with catalyst nanoparticles diameter distribution and independent of its material. |
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0367-598X |
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1779 |
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