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Lobanov, Y. V., Shcherbatenko, M. L., Semenov, A. V., Kovalyuk, V. V., Korneev, A. A., Goltsman, G. N., et al. (2017). Heterodyne spectroscopy with superconducting single-photon detector. In EPJ Web Conf. (Vol. 132, 01005).
Abstract: We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length.
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Elezov, M. S., Ozhegov, R. V., Goltsman, G. N., Makarov, V., Vinogradov, E. A., Naumov, A. V., et al. (2017). Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system. In EPJ Web Conf. (Vol. 132, 01004 (1 to 2)).
Abstract: Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
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Florya, I. N., Korneeva, Y. P., Sidorova, M. V., Golikov, A. D., Gaiduchenko, I. A., Fedorov, G. E., et al. (2015). Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs. In EPJ Web of Conferences (Vol. 103, 10004 (1 to 2)).
Abstract: We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
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Fedorov, G. E., Gaiduchenko, I. A., Golikov, A. D., Rybin, M. G., Obraztsova, E. D., Voronov, B. M., et al. (2015). Response of graphene based gated nanodevices exposed to THz radiation. In EPJ Web of Conferences (Vol. 103, 10003 (1 to 2)).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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Elezov, M. S., Ozhegov, R. V., Kurochkin, Y. V., Goltsman, G. N., Makarov, V. S., Samartsev, V. V., et al. (2015). Countermeasures against blinding attack on superconducting nanowire detectors for QKD. In EPJ Web Conf. (Vol. 103, 10002 (1 to 2)).
Abstract: Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution.
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Goltsman, G. N., Samartsev, V. V., Vinogradov, E. A., Naumov, A. V., & Karimullin, K. R. (2015). New generation of superconducting nanowire single-photon detectors. In EPJ Web of Conferences (Vol. 103, 01006 (1 to 2)).
Abstract: We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.
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Kovaluyk, V., Lazarenko, P., Kozyukhin, S., An, P., Prokhodtsov, A., Goltsman, G., et al. (2019). Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures. In Proc. Amorphous and Nanostructured Chalcogenides (pp. 47–48). Technical University of Moldova.
Abstract: The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Aksaev, E. E., Gershenzon, E. M., Gershenson, M. E., Goltsman, G. N., Semenov, A. D., & Sergeev, A. V. (1989). Prospects for using high-temperature superconductors to create electron bolometers. Pisma v Zhurnal Tekhnicheskoi Fiziki, 15(14), 88–93.
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Gershenzon, E. M., Gershenson, M. E., Goltsman, G. N., Karasik, B. S., Lyulkin, A. M., & Semenov, A. D. (1989). Fast-response superconducting electron bolometer. Pisma v Zhurnal Tekhnicheskoi Fiziki, 15(3), 88–92.
Abstract: The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns.
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Voevodin, E. I., Gershenzon, E. M., Goltsman, G. N., & Ptitsina, N. G. (1989). Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure. Sov. Phys. and Technics of Semiconductors, 23(8), 843–846.
Abstract: Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
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