| Records |
| Author |
Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. |
| Title |
New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser |
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Journal Article |
| Year |
1991 |
Publication |
Appl. Phys. B |
Abbreviated Journal |
Appl. Phys. B |
| Volume |
53 |
Issue |
4 |
Pages |
207-212 |
| Keywords |
CO2 IR lasers, applications, CH3Cl, CH3Br |
| Abstract |
In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime. |
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0721-7269 |
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1678 |
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Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G. |
| Title |
Ultrafast reset time of superconducting single photon detectors |
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Journal Article |
| Year |
2008 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
92 |
Issue |
24 |
Pages |
241112 (1 to 3) |
| Keywords |
SSPD, SNSPD |
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0003-6951 |
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429 |
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Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. |
| Title |
Superconducting single photon detectors made by local oxidation with an atomic force microscope |
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Journal Article |
| Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
90 |
Issue |
19 |
Pages |
191116 (1 t0 3) |
| Keywords |
SSPD |
| Abstract |
The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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0003-6951 |
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423 |
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Korneev, A.; Kouminov, P.; Matvienko, V.; Chulkova, G.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Currie, M.; Lo, W.; Wilsher, K.; Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, Roman |
| Title |
Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors |
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Journal Article |
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2004 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
84 |
Issue |
26 |
Pages |
5338-5340 |
| Keywords |
SSPD, NEP, QE |
| Abstract |
We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength. |
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0003-6951 |
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532 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
| Title |
Energy spectrum of free excitons in germanium |
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| Year |
1973 |
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JETP Lett. |
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JETP Lett. |
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18 |
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3 |
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93 |
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Ge, free excitons, energy spectrum |
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1734 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
| Year |
1972 |
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JETP Lett. |
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JETP Lett. |
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16 |
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4 |
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161-162 |
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Ge, energy spectrum, free excitons |
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1736 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Journal Article |
| Year |
1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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6 |
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241 |
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Ge, gamma irradiation, defects, impurities |
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1742 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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| Year |
1971 |
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JETP Lett. |
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JETP Lett. |
| Volume |
14 |
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5 |
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185-186 |
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Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Transitions of electrons between excited states of donors in germanium |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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2 |
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63-65 |
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Ge, donors, excited states |
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1740 |
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Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Heating of quasiparticles in a superconducting film in the resistive state |
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Journal Article |
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1981 |
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JETP Lett. |
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JETP Lett. |
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34 |
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5 |
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268-271 |
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