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	Author	Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M.
	Title	Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it			Type	Conference Article
	Year	1978	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	42	Issue	6	Pages	1142-1148
	Keywords	energy spectrum, Ge, magnetic field
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1722
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
	Title	Investigation of excited donor states in GaAs			Type	Journal Article
	Year	1974	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	7	Issue	10	Pages	1248-1250
	Keywords	GaAs, excited donor states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1733
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	Author	Gershenzon, E. M.; Goltsman, G. N.
	Title	Zeeman effect in excited-states of donors in germanium			Type	Journal Article
	Year	1972	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	6	Issue	3	Pages	509
	Keywords	Ge, donors, Zeeman effect
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1737
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	Author	Goltsman, G.
	Title	Simple method for stabilizing power of submillimetric spectrometer			Type	Journal Article
	Year	1972	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume		Issue	1	Pages	136
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1738
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	Author	Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors			Type	Journal Article
	Year	1983	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	17	Issue	8	Pages	908-913
	Keywords	BWO spectroscopy, pure semiconductors, residual impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках			Approved	no
	Call Number				Serial	1714
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	Author	Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G.
	Title	NbN hot electron bolometer mixers with superior performance for space applications			Type	Conference Article
	Year	2004	Publication	Proc. Int. workshop on low temp. electronics	Abbreviated Journal	Proc. Int. workshop on low temp. electronics
	Volume		Issue		Pages	11-17
	Keywords	NbN HEB mixers, applications
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Noordwijk	Editor	Armandillo, E.; Leone, B.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	International workshop on low temperature electronics- WOLTE 6 - Noordwijk
	Notes				Approved	no
	Call Number				Serial	1496
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	Author	Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N.
	Title	Ultrafast superconducting bolometer receivers for terahertz applications			Type	Abstract
	Year	2009	Publication	Proc. PIERS	Abbreviated Journal	Proc. PIERS
	Volume		Issue		Pages	867
	Keywords	HEB
	Abstract	The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
	Address	Moscow, Russia
	Corporate Author				Thesis
	Publisher	The Electromagnetics Academy	Place of Publication	777 Concord Avenue, Suite 207 Cambridge, MA 02138	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1559-9450	ISBN	978-1-934142-09-7	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ ozhegovultrafast			Serial	1022
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	Author	Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M.
	Title	On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data			Type	Journal Article
	Year	1996	Publication	J. of Communications Technology and Electronics	Abbreviated Journal	J. of Communications Technology and Electronics
	Volume	41	Issue	5	Pages	408-414
	Keywords	submillimeter waves, transmission
	Abstract	A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1064-2269	ISBN		Medium
	Area		Expedition		Conference
	Notes	Радиотехника и электроника 41, no. 4 (1996): 441-447			Approved	no
	Call Number				Serial	1611
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	Author	Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
	Title	The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer			Type	Journal Article
	Year	2003	Publication	J. of communications technol. & electronics	Abbreviated Journal	J. of communications technol. & electronics
	Volume	48	Issue	6	Pages	671-675
	Keywords	NbN HEB mixers
	Abstract	Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
	Address
	Corporate Author				Thesis
	Publisher	MAIK Nauka/Interperiodica, Birmingham, AL	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1064-2269	ISBN		Medium
	Area		Expedition		Conference
	Notes	https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO)			Approved	no
	Call Number	Vakhtomin2003			Serial	1522
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Journal Article
	Year	2019	Publication	Phys. Status Solidi RRL	Abbreviated Journal	Phys. Status Solidi RRL
	Volume	13	Issue	9	Pages	1900187-(1-6)
	Keywords
	Abstract	For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6254	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1149
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