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Author Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N.
Title Ultrafast superconducting bolometer receivers for terahertz applications Type Abstract
Year 2009 Publication Proc. PIERS Abbreviated Journal Proc. PIERS
Volume Issue Pages 867
Keywords HEB
Abstract The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
Address Moscow, Russia
Corporate Author Thesis
Publisher The Electromagnetics Academy Place of Publication 777 Concord Avenue, Suite 207 Cambridge, MA 02138 Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1559-9450 ISBN 978-1-934142-09-7 Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ sasha @ ozhegovultrafast Serial 1022
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M.
Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics
Volume 41 Issue 5 Pages 408-414
Keywords submillimeter waves, transmission
Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no
Call Number Serial 1611
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics
Volume 48 Issue 6 Pages 671-675
Keywords NbN HEB mixers
Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
Address
Corporate Author Thesis
Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no
Call Number Vakhtomin2003 Serial 1522
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Author Tiulina, V.; Iomdina, E.; Goltsman, G.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Zaitsev, S.; Zernii, E.; Senin, I.
Title UVB promotes the initiation of uveitic inflammatory and changes in thehydration of the cornea in vivo Type Miscellaneous
Year 2019 Publication FEBS Open Bio Abbreviated Journal FEBS Open Bio
Volume 9 Issue S1 Pages 79
Keywords medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation
Abstract Recently, active research has been conducted in the field of terahertz (THz) scanning of human tissues for non­invasive determination of their hydration level, which haves hown high diagnostic efficiency of this technology in various pathological conditions. Recently, we have developed a laboratory model of the facility for monitoring the state of the water balance of the cornea using THz scanning in vivo, which opens up the possibility of applying this approach in ophthalmology. The aim of the work wasto compare the results of the THz scan of the cornea with its clinical changes using the example of an experimental model of the UV­ induced keratouveitis. Anexperimental study, which included a comprehensive assessment of clinical changes in the cornea of rabbits during keratouveitis induction, revealed a decrease in the stability of the tear film, pathological changes in the corneal epithelium and stroma, as well as its anatomical and optical parameters. Comparison of data obtained in the THz scan of the cornea with tears production, optical coherence tomography and confocal microscopy showed their consistency in all observation periods, which allows us to conclude that the developed laboratory setup works and the feasibility of further research to promote the corneal hydration evaluation technology in clinical practice. Acknowledgements: Research was funded by the RSF, grant number 16­15­00255.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2211-5463 ISBN Medium
Area Expedition Conference
Notes Poster P-01-040 Approved no
Call Number Serial 1276
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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.
Volume 7 Issue 3 Pages 2000872
Keywords SWCNT transistors
Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2199-160X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1843
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