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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Il’in, K. S., Milostnaya, I. I., Verevkin, A. A., Gol’tsman, G. N., Gershenzon, E. M., & Sobolewski, R. (1998). Ultimate quantum efficiency of a superconducting hot-electron photodetector. Appl. Phys. Lett., 73(26), 3938–3940.
Abstract: The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs.
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Kovalyuk, V., Ferrari, S., Kahl, O., Semenov, A., Lobanov, Y., Shcherbatenko, M., et al. (2017). Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application. In J. Phys.: Conf. Ser. (Vol. 917, 062032).
Abstract: With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength
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Glejm, A. V., Anisimov, A. A., Asnis, L. N., Vakhtomin, Y. B., Divochiy, A. V., Egorov, V. I., et al. (2014). Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s. Bulletin of the Russian Academy of Sciences. Physics, 78(3), 171–175.
Abstract: An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described.
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McCarthy, A., Krichel, N. J., Gemmell, N. R., Ren, X., Tanner, M. G., Dorenbos, S. N., et al. (2013). Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection. Opt. Express, 21(7), 8904–8915.
Abstract: This paper highlights a significant advance in time-of-flight depth imaging: by using a scanning transceiver which incorporated a free-running, low noise superconducting nanowire single-photon detector, we were able to obtain centimeter resolution depth images of low-signature objects in daylight at stand-off distances of the order of one kilometer at the relatively eye-safe wavelength of 1560 nm. The detector used had an efficiency of 18% at 1 kHz dark count rate, and the overall system jitter was ~100 ps. The depth images were acquired by illuminating the scene with an optical output power level of less than 250 µW average, and using per-pixel dwell times in the millisecond regime.
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