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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Hübers, H. - W., Schubert, J., Krabbe, A., Birk, M., Wagner, G., Semenov, A., et al. (2001). Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies. Infrared Physics & Technology, 42(1), 41–47.
Abstract: Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Gol’tsman, G. N., & Gershenzon, E. M. (1999). Phonon-cooled hot-electron bolometric mixer: overview of recent results. Appl. Supercond., 6(10-12), 649–655.
Abstract: The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field.
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Shurakov, A., Mikhalev, P., Mikhailov, D., Mityashkin, V., Tretyakov, I., Kardakova, A., et al. (2018). Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer. Microelectronic Engineering, 195, 26–31.
Abstract: In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
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Korneev, A., Lipatov, A., Okunev, O., Chulkova, G., Smirnov, K., Gol’tsman, G., et al. (2003). GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits. Microelectronic Engineering, 69(2-4), 274–278.
Abstract: We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Heusinger, M. A., Nebosis, R. S., Schatz, W., Renk, K. F., Gol’tsman, G. N., Karasik, B. S., et al. (1993). Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 193–195).
Abstract: We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
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Gol’tsman, G. N., Semenov, A. D., Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., & Gershenzon, E. M. (1993). Electron-phonon interaction in thin YBaCuO films and fast detectors. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 184–185).
Abstract: The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
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Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., Gol’tsman, G. N., Semenov, A. D., & Gershenzon, E. M. (1993). Thermal boundary resistance at YBaCuO film-substrate interface. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 405–406).
Abstract: The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Fiore, A., Marsili, F., Bitauld, D., Gaggero, A., Leoni, R., Mattioli, F., et al. (2009). Counting photons using a nanonetwork of superconducting wires. In M. Cheng (Ed.), Nano-Net (pp. 120–122). Berlin, Heidelberg: Springer Berlin Heidelberg.
Abstract: We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
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Semenov, A. D., Hübers, H. - W., Gol’tsman, G. N., & Smirnov, K. (2002). Superconducting quantum detector for astronomy and X-ray spectroscopy. In J. Pekola, B. Ruggiero, & P. Silvestrini (Eds.), Proc. Int. Workshop on Supercond. Nano-Electronics Devices (pp. 201–210). Boston, MA: Springer.
Abstract: We propose the novel concept of ultra-sensitive energy-dispersive superconducting quantum detectors prospective for applications in astronomy and X-ray spectroscopy. Depending on the superconducting material and operation conditions, such detector may allow realizing background limited noise equivalent power 10−21 W Hz−1/2 in the terahertz range when exposed to 4-K background radiation or counting of 6-keV photon with almost 10—4 energy resolution. Planar layout and relatively simple technology favor integration of elementary detectors into a detector array.
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