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Terai, H., Miki, S., Yamashita, T., Makise, K., & Wang, Z. (2010). Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors. Appl. Phys. Lett., 97(11), 3.
Abstract: A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Tanner, M. G., Natarajan, C. M., Pottapenjara, V. K., O'Connor, J. A., Warburton, R. J., Hadfield, R. H., et al. (2010). Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon. Appl. Phys. Lett., 96(22), 3.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Marsili, F., Najafi, F., Herder, C., & Berggren, K. K. (2011). Electrothermal simulation of superconducting nanowire avalanche photodetectors. Appl. Phys. Lett., 98(9), 3.
Abstract: We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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Cao, Q., Yoon, S. F., Tong, C. Z., Ngo, C. Y., Liu, C. Y., Wang, R., et al. (2009). Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers. Appl. Phys. Lett., 95(19), 3.
Abstract: The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Mannino, G., Spinella, C., Ruggeri, R., La Magna, A., Fisicaro, G., Fazio, E., et al. (2010). Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Appl. Phys. Lett., 97(2), 3.
Abstract: We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Yates, S. J. C., Baryshev, A. M., Baselmans, J. J. A., Klein, B., & Güsten, R. (2009). Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors. Appl. Phys. Lett., 95(4), 3.
Abstract: Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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Hocker, L. O., Sokoloff, D. R., Daneu, V., Szoke, A., & Javan, A. (1968). Frequency mixing in the infrared and far-infrared using a metal-to-metal point contact diode. Appl Phys Lett, 12(12).
Abstract: Metalâ€toâ€metal point contact diodes were used to obtain the 54â€GHz beat notes between two adjacent 10.6â€μ CO2 laser transitions. The speed of the diodes in the farâ€infrared is at least 1000 GHz. This was tested with a 337â€μ HCN laser.
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Hoevers, H. F. C., Bento, A. C., Bruijn, M. P., Gottardi, L., Korevaar, M. A. N., Mels, W. A., et al. (2000). Thermal fluctuation noise in a voltage biased superconducting transition edge thermometer. Appl. Phys. Lett., 77(26), 4421–4424.
Abstract: The current noise at the output of a microcalorimeter with a voltage biased superconducting transition edge thermometer is studied in detail. In addition to the two well-known noise sources: thermal fluctuation noise from the heat link to the bath and Johnson noise from the resistive thermometer, a third noise source strongly correlated with the steepness of the thermometer is required to fit the measured noise spectra. Thermal fluctuation noise, originating in the thermometer itself, fully explains the additional noise. A simple model provides quantitative agreement between the observed and calculated noise spectra for all bias points in the superconducting transition.
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Burke, P. J., Schoelkopf, R. J., Prober, D. E., Skalare, A., Karasik, B. S., Gaidis, M. C., et al. (1998). Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers. Appl. Phys. Lett., 72(12), 1516–1518.
Abstract: A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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