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Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 112 | Issue | 14 | Pages | 141101 (1 to 5) |
Keywords | graphene field effect transistors, FET | ||||
Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1309 | |||
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Author | Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. | ||||
Title | Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation | Type | Journal Article | ||
Year | 2015 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
Volume | 118 | Issue | 19 | Pages | 194303 |
Keywords | terahertz detectors, asymmetric carbon nanotubes, CNT | ||||
Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. | ||||
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ISSN | 0021-8979 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1169 | |||
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Author | Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
Title | Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires | Type | Journal Article | ||
Year | 2015 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 106 | Issue | 15 | Pages | 151101 (1 to 5) |
Keywords | SSPD, SNSPD | ||||
Abstract | We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests. |
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1211 | |||
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Author | Lusche, R.; Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W. | ||||
Title | Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors | Type | Journal Article | ||
Year | 2014 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
Volume | 116 | Issue | 4 | Pages | 043906 (1 to 9) |
Keywords | NbN SSPD, SNSPD, TaN | ||||
Abstract | A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model. | ||||
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ISSN | 0021-8979 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1357 | |||
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Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
Keywords | carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1171 | |||
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Author | Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G. | ||||
Title | Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application | Type | Conference Article | ||
Year | 2017 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 917 | Issue | Pages | 062032 | |
Keywords | SSPD, SNSPD, waveguide | ||||
Abstract | With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1140 | ||
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Author | Glejm, A. V.; Anisimov, A. A.; Asnis, L. N.; Vakhtomin, Yu. B.; Divochiy, A. V.; Egorov, V. I.; Kovalyuk, V. V.; Korneev, A. A.; Kynev, S. M.; Nazarov, Yu. V.; Ozhegov, R. V.; Rupasov, A. V.; Smirnov, K. V.; Smirnov, M. A.; Goltsman, G. N.; Kozlov, S. A. | ||||
Title | Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s | Type | Journal Article | ||
Year | 2014 | Publication | Bulletin of the Russian Academy of Sciences. Physics | Abbreviated Journal | |
Volume | 78 | Issue | 3 | Pages | 171-175 |
Keywords | SSPD, SNSPD, applications | ||||
Abstract | An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described. | ||||
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ISSN | 1062-8738 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 940 | ||
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Author | Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. | ||||
Title | Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits | Type | Journal Article | ||
Year | 2017 | Publication | Optica | Abbreviated Journal | Optica |
Volume | 4 | Issue | 5 | Pages | 557-562 |
Keywords | Waveguide integrated superconducting single-photon detectors; Nanophotonics and photonic crystals; Quantum detectors; Spectrometers and spectroscopic instrumentation | ||||
Abstract | The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip. | ||||
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Call Number | RPLAB @ kovalyuk @ | Serial | 1119 | ||
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Author | Ozhegov, R.; Elezov, M.; Kurochkin, Y.; Kurochkin, V.; Divochiy, A.; Kovalyuk, V.; Vachtomin, Y.; Smirnov, K.; Goltsman, G. | ||||
Title | Quantum key distribution over 300 | Type | Conference Article | ||
Year | 2014 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
Volume | 9440 | Issue | Pages | 1F (1 to 9) | |
Keywords | SSPD, SNSPD applicatins, quantum key distribution, QKD | ||||
Abstract | We discuss the possibility of polarization state reconstruction and measurement over 302 km by Superconducting Single- Photon Detectors (SSPDs). Because of the excellent characteristics and the possibility to be effectively coupled to singlemode optical fiber many applications of the SSPD have already been reported. The most impressive one is the quantum key distribution (QKD) over 250 km distance. This demonstration shows further possibilities for the improvement of the characteristics of quantum-cryptographic systems such as increasing the bit rate and the quantum channel length, and decreasing the quantum bit error rate (QBER). This improvement is possible because SSPDs have the best characteristics in comparison with other single-photon detectors. We have demonstrated the possibility of polarization state reconstruction and measurement over 302.5 km with superconducting single-photon detectors. The advantage of an autocompensating optical scheme, also known as “plugandplay” for quantum key distribution, is high stability in the presence of distortions along the line. To increase the distance of quantum key distribution with this optical scheme we implement the superconducting single photon detectors (SSPD). At the 5 MHz pulse repetition frequency and the average photon number equal to 0.4 we measured a 33 bit/s quantum key generation for a 101.7 km single mode ber quantum channel. The extremely low SSPD dark count rate allowed us to keep QBER at 1.6% level. | ||||
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Publisher | SPIE | Place of Publication | Editor | Orlikovsky, A. A. | |
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Area | Expedition | Conference | International Conference on Micro- and Nano-Electronics | ||
Notes | Approved | no | |||
Call Number | RPLAB @ sasha @ ozhegov2014quantum | Serial | 1048 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N. | ||||
Title | Characterization of MoSi superconducting single-photon detectors in the magnetic field | Type | Journal Article | ||
Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 25 | Issue | 3 | Pages | 2200504 (1 to 4) |
Keywords | SSPD, SNSPD | ||||
Abstract | We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges. | ||||
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Call Number | RPLAB @ akorneev @ KorneevIEEE2015 | Serial | 991 | ||
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Author | Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. | ||||
Title | Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer | Type | Journal Article | ||
Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 25 | Issue | 3 | Pages | 2300304 |
Keywords | HEB detector responsivity, HEB model, numerical calculations, numerical model | ||||
Abstract | We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. | ||||
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Call Number | Serial | 953 | |||
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Author | Korneeva, Y.; Florya, I.; Semenov, A.; Korneev, A.; Goltsman, G. | ||||
Title | New generation of nanowire NbN superconducting single-photon detector for mid-infrared | Type | Journal Article | ||
Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 21 | Issue | 3 | Pages | 323-326 |
Keywords | SSPD | ||||
Abstract | We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD. | ||||
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Call Number | RPLAB @ gujma @ | Serial | 644 | ||
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Author | Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
Title | Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform | Type | Conference Article | ||
Year | 2017 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 917 | Issue | Pages | 062042 | |
Keywords | Si3N4, Bragg waveguides | ||||
Abstract | We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating | ||||
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Call Number | RPLAB @ kovalyuk @ | Serial | 1141 | ||
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Author | Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. | ||||
Title | Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity | Type | Journal Article | ||
Year | 2014 | Publication | Laser Phys. Lett. | Abbreviated Journal | |
Volume | 11 | Issue | 1 | Pages | 015004 (1 to 4) |
Keywords | HEB applications, HEB detector applications, short THz pulses detection | ||||
Abstract | We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. | ||||
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Call Number | Serial | 1076 | |||
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Author | Korneeva, Y. P.; Mikhailov, M. Y.; Pershin, Y. P.; Manova, N. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Korneev, A. A.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Y.; Goltsman, G. N. | ||||
Title | Superconducting single-photon detector made of MoSi film | Type | Journal Article | ||
Year | 2014 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
Volume | 27 | Issue | 9 | Pages | 095012 |
Keywords | SSPD, SNSPD | ||||
Abstract | We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film. | ||||
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Publisher | IOP Publishing | Place of Publication | Editor | ||
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ISSN | 0953-2048 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | RPLAB @ sasha @ korneeva2014superconducting | Serial | 1044 | ||
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Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
Volume | 109 | Issue | 13 | Pages | 132602 |
Keywords | HEB mixer, contacts | ||||
Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1107 | |||
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Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
Keywords | disordered TiN films, electron-phonon relaxation time | ||||
Abstract | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 941 | ||
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Author | Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. | ||||
Title | Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
Year | 2017 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
Volume | 132 | Issue | 2 | Pages | 2 |
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Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor†in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched†in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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Call Number | RPLAB @ kovalyuk @ | Serial | 1116 | ||
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Author | Kahl, O.; Ferrari, S.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
Title | Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths | Type | Journal Article | ||
Year | 2015 | Publication | Sci. Rep. | Abbreviated Journal | Sci. Rep. |
Volume | 5 | Issue | Pages | 10941 (1 to 11) | |
Keywords | optical waveguides; waveguide integrated SSPD; waveguide SSPD; nanophotonics | ||||
Abstract | Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present efficiencies close to unity at 1550nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noiseequivalent powers in the 10–19W/Hz–1/2 range and the timing jitter is as low as 35ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms. | ||||
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Notes | PMID:26061283; PMCID:PMC4462017 | Approved | no | ||
Call Number | RPLAB @ kovalyuk @ | Serial | 946 | ||
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Author | Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. | ||||
Title | Resonant terahertz detection using graphene plasmons | Type | Journal Article | ||
Year | 2018 | Publication | Nat. Commun. | Abbreviated Journal | Nat. Commun. |
Volume | 9 | Issue | Pages | 5392 (1 to 8) | |
Keywords | THz, graphene plasmons | ||||
Abstract | Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. | ||||
Address | Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru | ||||
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ISSN | 2041-1723 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1148 | |||
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Author | Pernice, W.; Schuck, C.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. | ||||
Title | High speed travelling wave single-photon detectors with near-unity quantum efficiency | Type | Journal Article | ||
Year | 2011 | Publication | arXiv | Abbreviated Journal | arXiv |
Volume | Issue | Pages | 1-14 | ||
Keywords | SPD | ||||
Abstract | Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. Close-to-unity photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides and achieve single photon detection efficiency up to 94% at telecom wavelengths. Our detectors are fully embedded in a scalable, low loss silicon photonic circuit and provide ultrashort timing jitter of 18ps at multi-GHz detection rates. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. | ||||
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Publisher | Place of Publication | arXiv:1108.5299 | Editor | ||
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Call Number | RPLAB @ gujma @ | Serial | 661 | ||
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Author | Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G. | ||||
Title | Superconducting NbN terahertz detectors and infrared photon counters | Type | Journal Article | ||
Year | 2010 | Publication | Вестник НГУ. Серия: физ. | Abbreviated Journal | Вестник НГУ. Серия: физ. |
Volume | 5 | Issue | 4 | Pages | 68-72 |
Keywords | HEB; HEB mixer | ||||
Abstract | We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films. | ||||
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ISSN | 1818-7994 | ISBN | Medium | ||
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Notes | УДК 538.9 | Approved | no | ||
Call Number | RPLAB @ gujma @ | Serial | 708 | ||
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Author | Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. | ||||
Title | Superconducting diamond films as perspective material for direct THz detectors | Type | Abstract | ||
Year | 2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 82 | ||
Keywords | KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP | ||||
Abstract | Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013. | ||||
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Call Number | Serial | 1173 | |||
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Author | Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. | ||||
Title | Temperature dependence of superconducting hot electron bolometers | Type | Conference Article | ||
Year | 2013 | Publication | Not published results: 24th international symposium on space terahertz technology | Abbreviated Journal | |
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Keywords | HEB | ||||
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Address | Groningen,The Netherlands | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1067 | |||
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Author | Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. | ||||
Title | Tunable frequency-selective surface based on superconducting split-ring resonators | Type | Conference Article | ||
Year | 2014 | Publication | 8th Metamaterials | Abbreviated Journal | 8th Metamaterials |
Volume | Issue | Pages | |||
Keywords | superconducting split-ring resonators | ||||
Abstract | We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. | ||||
Address | Copenhagen, Denmark | ||||
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Area | Expedition | Conference | 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials | ||
Notes | Approved | no | |||
Call Number | Serial | 1749 | |||
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