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Ciulin, V.; Carter, S. G.; Sherwin, M. S. |
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Title |
Terahertz optical mixing in biased GaAs single quantum wells |
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2004 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
70 |
Issue |
11 |
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115312-(1-6) |
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Keywords |
optical mixing |
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1098-0121 |
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501 |
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Author |
Su, M. Y.; Carter, S. G.; Sherwin, M. S. |
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Title |
Strong-field terahertz optical mixing in excitons |
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Journal Article |
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Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
67 |
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12 |
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optical mixing |
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1098-0121 |
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500 |
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Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C. |
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Title |
Optical control of photon tunneling through an array of nanometer-scale cylindrical channels |
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Journal Article |
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Year |
2002 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
66 |
Issue |
20 |
Pages |
205414_1-205414_5 |
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Keywords |
optical mixing |
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1098-0121 |
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499 |
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Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. |
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Title |
Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy |
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Journal Article |
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Year |
1994 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
49 |
Issue |
15 |
Pages |
10484-10494 |
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Keywords |
Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy |
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Abstract |
Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. |
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American Physical Society |
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1005 |
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Author |
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
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Title |
Electron heating in metallic resistors at sub-Kelvin temperature |
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Journal Article |
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Year |
2007 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
76 |
Issue |
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Pages |
165426(1-9) |
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Keywords |
electron heating in resistor, HEB distributed model, HEB model, hot electrons |
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Abstract |
In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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936 |
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