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| Author | Cherednichenko, Sergey; Drakinskiy, Vladimir; Berg, Therese; Khosropanah, Pourya; Kollberg, Erik | ||||
| Title | Hot-electron bolometer terahertz mixers for the Herschel Space Observatory | Type | Journal Article | ||
| Year | 2008 | Publication | Review of Scientific Instruments | Abbreviated Journal | Rev. Sci. Instrum. |
| Volume | 79 | Issue | Pages | 034501 | |
| Keywords | HEB mixer, HEB detector, HEB direct detector, applications | ||||
| Abstract | We report on low noise terahertz mixers(1.4–1.9THz) developed for the heterodyne spectrometer onboard the Herschel Space Observatory. The mixers employ double slot antenna integrated superconducting hot-electron bolometers (HEBs) made of thin NbN films. The mixer performance was characterized in terms of detection sensitivity across the entire rf band by using a Fourier transform spectrometer (from 0.5to2.5THz, with 30GHz resolution) and also by measuring the mixernoise temperature at a limited number of discrete frequencies. The lowest mixernoise temperature recorded was 750K [double sideband (DSB)] at 1.6THz and 950KDSB at 1.9THz local oscillator (LO) frequencies. Averaged across the intermediate frequency band of 2.4–4.8GHz, the mixernoise temperature was 1100KDSB at 1.6THz and 1450KDSB at 1.9THz LO frequencies. The HEB heterodyne receiver stability has been analyzed and compared to the HEB stability in the direct detection mode. The optimal local oscillator power was determined and found to be in a 200–500nW range. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 908 | |||
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| Author | Khosropanah, Pourya | ||||
| Title | NbN and NbTiN hot electron bolometer THz mixers | Type | Book Whole | ||
| Year | 2003 | Publication | Chalmers University of Technology | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | HEB mixer, hot electron bolometer mixer, NbN, NbTiN, superconducting detector, heterodyne receiver, THz mixer, submillimeter mixer, quasioptical receiver, double slot antenna, twin slot antenna, spiral antenna, receiver noise, FTS, Fourier Transform Spectrometer | ||||
| Abstract | The thesis reports the development of Hot Electron Bolometer (HEB) mixers for radio astronomy heterodyne receivers in THz frequency range. Part of this work is the fabrication of HEB devices, which are based on NbN or NbTiN superconducting thin films (â‰<a4>5 nm). They are integrated with wideband spiral or double-slot planar antennas. The mixer chips are incorporated into a quasi-optical receiver. The experimental part of this work focuses on the characterization of the receiver as a whole, and the HEB mixers as a part. Double side band receiver noise temperature and the IF bandwidth are reported for frequencies from 0.7 THz up to 2.6 THz. The spectrum of the direct response of HEB integrated with dierent antennas are measured using Fourier Transform Spectrometer (FTS). The effect of the bolometer size on total receiver performance and the LO power requirements is also discussed. A high-yield and reliable process for fabrication of NbN HEB mixers have been achieved. Over 100 devices with different bolometer geometry, film property and also different antennas have been fabricated and measured. The measured data enables us to discuss the impact of different parameters to the receiver overall performance. This work has provided NbN HEB mixers to the following receivers: TREND (Terahertz REceiver with NbN HEB Device) operating at 1.25-1.5 THz, installed in AST/RO Submillimeter Wave Telescope, Amundsen/Scott South Pole Station, in 2002-2003. Band 6-low (1.410-1.700 THz) and 6-high (1.700-1.920 THz) of the HIFI (Heterodyne Instrument for Far Infra-red) in the Herschel Space Observatory, due to launch in 2007 by ESA (European Space Agency). Besides, there has been continuous efforts to develop better models to explain the mixer performance more accurately. They are based on two temperature model for electrons and phonons and solving one-dimensional heat balance equations along the bolometer. The principles of these models are illustrated and the calculated results are compared with measured data. |
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| Corporate Author | Thesis | Ph.D. thesis | |||
| Publisher | Chalmers University of Technology | Place of Publication | Göteborg | Editor | |
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| Notes | Approved | no | |||
| Call Number | Serial | 910 | |||
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| Author | Klapwijk, T. M.; Barends, R.; Gao, J. R.; Hajenius, M.; Baselmans, J. J. A. | ||||
| Title | Improved superconducting hot-electron bolometer devices for the THz range | Type | Conference Article | ||
| Year | 2004 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 5498 | Issue | Pages | 129-139 | |
| Keywords | HEB mixer distributed model, numerical model | ||||
| Abstract | Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical conditions during the mixing process. We find that the mixing is predominantly due to the exponential rise of the local resistivity as a function of electron temperature. | ||||
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| Notes | Invited talk, Recommended by Klapwijk | Approved | no | ||
| Call Number | Serial | 912 | |||
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| Author | Seliverstov, Sergey V.; Rusova, Anastasia A.; Kaurova, Natalya S.; Voronov, Boris M.; Goltsman, Gregory N. | ||||
| Title | AC-biased superconducting NbN hot-electron bolometer for frequency-domain multiplexing | Type | Conference Article | ||
| Year | 2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 120-122 | ||
| Keywords | NbN HEB mixer | ||||
| Abstract | We present the results of characterization of fast and sensitive superconducting antenna-coupled THz direct detector based on NbN hot-electron bolometer (HEB) with AC-bias. We discuss the possibility of implementation of the AC-bias for design the readout system from the multi-element arrays of HEBs using standard technique of frequency-domain multiplexing. We demonstrate experimentally that this approach does not lead to significant deterioration of the HEB sensitivity compared with the value obtained for the same detector with DC- bias. Results of a numerical calculations of the HEB responsivity at AC-bias are in a good agreement with the experiment. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1174 | |||
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| Author | Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. | ||||
| Title | Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency | Type | Conference Article | ||
| Year | 2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 147-148 | ||
| Keywords | NbN HEB mixers, GaN buffer-layer, IF bandwidth | ||||
| Abstract | In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1175 | |||
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