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Author | Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. | ||||
Title | The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range | Type | Journal Article | ||
Year | 2016 | Publication | Tech. Phys. Lett. | Abbreviated Journal | |
Volume | 42 | Issue | 6 | Pages | 563-566 |
Keywords | HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection | ||||
Abstract | Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. | ||||
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Call Number | Serial | 1106 | |||
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Author | Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. | ||||
Title | NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers | Type | Conference Article | ||
Year | 2005 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
Volume | 5727 | Issue | Pages | 95-106 | |
Keywords | NbN HEB mixers | ||||
Abstract | We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter. | ||||
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Area | Expedition | Conference | Terahertz and Gigahertz Electronics and Photonics IV | ||
Notes | Approved | no | |||
Call Number | Serial | 378 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Lobanov, Y.; Shcherbatenko, M.; Finkel, M.; Maslennikov, S.; Semenov, A.; Voronov, B. M.; Rodin, A. V.; Klapwijk, T. M.; Gol'tsman, G. N. | ||||
Title | NbN hot-electron-bolometer mixer for operation in the near-IR frequency range | Type | Journal Article | ||
Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 25 | Issue | 3 | Pages | 2300704 (1 to 4) |
Keywords | HEB mixer, IR, optical antenna | ||||
Abstract | Traditionally, hot-electron-bolometer (HEB) mixers are employed for THz and “super-THz” heterodyne detection. To explore the near-IR spectral range, we propose a fiber-coupled NbN film based HEB mixer. To enhance the incident-light absorption, a quasi-antenna consisting of a set of parallel stripes of gold is used. To study the antenna effect on the mixer performance, we have experimentally studied a set of devices with different size of the Au stripe and spacing between the neighboring stripes. With use of the well-known isotherm technique we have estimated the absorption efficiency of the mixer, and the maximum efficiency has been observed for devices with the smallest pitch of the alternating NbN and NbN-Au stripes. Also, a proper alignment of the incident Eâƒ<2014>-field with respect to the stripes allows us to improve the coupling further. Studying IV-characteristics of the mixer under differently-aligned Eâƒ<2014>-field of the incident radiation, we have noticed a difference in their shape. This observation suggests that a difference exists in the way the two waves with orthogonal polarizations parallel and perpendicular Eâƒ<2014>-field to the stripes heat the electrons in the HEB mixer. The latter results in a variation in the electron temperature distribution over the HEB device irradiated by the two waves. | ||||
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Call Number | Serial | 952 | |||
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Author | Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. | ||||
Title | Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer | Type | Journal Article | ||
Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 25 | Issue | 3 | Pages | 2300304 |
Keywords | HEB detector responsivity, HEB model, numerical calculations, numerical model | ||||
Abstract | We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. | ||||
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Call Number | Serial | 953 | |||
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Author | Lobanov, Y.; Tong, E.; Blundell, R.; Hedden, A.; Voronov, B.; Gol'tsman, G. | ||||
Title | Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz | Type | Journal Article | ||
Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 21 | Issue | 3 | Pages | 628-631 |
Keywords | waveguide NbN HEB mixers | ||||
Abstract | We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment. | ||||
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Call Number | RPLAB @ gujma @ | Serial | 719 | ||
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Author | Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N. | ||||
Title | Direct measurement of the gain and noise bandwidths of HEB mixers | Type | Journal Article | ||
Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 21 | Issue | 3 | Pages | 645-648 |
Keywords | waveguide NbN HEB mixers | ||||
Abstract | The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement. | ||||
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Call Number | RPLAB @ gujma @ | Serial | 720 | ||
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Author | Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikov, Sergey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory | ||||
Title | Ultrawide noise bandwidth of NbN hot-electron bolometer mixers with in situ gold contacts | Type | Journal Article | ||
Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 21 | Issue | 3 | Pages | 620-623 |
Keywords | NbN HEB mixer bandwidth | ||||
Abstract | We report a noise bandwidth of 7 GHz in the new generation of NbN hot-electron bolometer (HEB) mixers that are being developed for the space observatory Millimetron. The HEB receiver driven by a 2.5-THz local oscillator offered a noise temperature of 600 K in a 50-MHz final detection bandwidth. As the filter center frequency was swept this value remained nearly constant up to the cutoff frequency of the cryogenic amplifier at 7 GHz. We believe that such a low value of the noise temperature is due to reduced radio frequency (RF) loss at the interface between the superconducting film and the gold contacts. We have also performed gain bandwidth measurements at the superconducting transition on HEB mixers with various lengths and found them to be in excellent agreement with the results of the analytical and numerical models developed for the HEB mixer with both diffusion and phonon cooling of hot electrons. | ||||
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Call Number | RPLAB @ gujma @ | Serial | 716 | ||
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Author | Ryabchun, Sergey; Tong, Cheuk-Yu Edward; Paine, Scott; Lobanov, Yury; Blundell, Raymond; Goltsman, Gregory | ||||
Title | Temperature resolution of an HEB receiver at 810 GHz | Type | Journal Article | ||
Year | 2009 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 19 | Issue | 3 | Pages | 293-296 |
Keywords | HEB mixer | ||||
Abstract | We present the results of direct measurements of the temperature resolution of an HEB receiver operating at 810 GHz, in both continuum and spectroscopic modes. In the continuum mode, the input of the receiver was switched between black bodies with different physical temperatures. With a system noise temperature of around 1100 K, the receiver was able to resolve loads which differed in temperature by about 1 K over an integration time of 5 seconds. This resolution is significantly worse than the value of 0.07 K given by the radiometer equation. In the spectroscopic mode, a gas cell filled with carbonyl sulphide (OCS) gas was used and the emission line at 813.3537060 GHz was measured using the receiver in conjunction with a digital spectrometer. From the observed spectra, we determined that the measurement uncertainty of the equivalent emission temperature was 2.8 K for an integration time of 0.25 seconds and a spectral resolution of 12 MHz, compared to a 1.4 K temperature resolution given by the radiometer equation. This relative improvement is due to the fact that at short integration times the contribution from 1/f noise and drift are less dominant. In both modes, the temperature resolution was improved by about 40% with the use of a feedback loop which adjusted the level of an injected microwave radiation to maintain a constant operating current of the HEB mixer. This stabilization scheme has proved to be very effective to keep the temperature resolution of the HEB receiver to close to the theoretical value given by the radiometer equation. | ||||
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Call Number | Serial | 636 | |||
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Author | Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. | ||||
Title | Local resistivity and the current-voltage characteristics of hot electron bolometer mixers | Type | Journal Article | ||
Year | 2005 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 15 | Issue | 2 | Pages | 495-498 |
Keywords | HEB mixer distributed model, HEB distributed model, distributed HEB model | ||||
Abstract | Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 980 | |||
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Author | Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N. | ||||
Title | Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers | Type | Journal Article | ||
Year | 2003 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 13 | Issue | 2 | Pages | 168-171 |
Keywords | NbN HEB mixers | ||||
Abstract | We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz. | ||||
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Call Number | Serial | 343 | |||
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Author | Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. | ||||
Title | Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer | Type | Journal Article | ||
Year | 2003 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 13 | Issue | 2 | Pages | 164-167 |
Keywords | NbN HEB mixer | ||||
Abstract | In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions. | ||||
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Call Number | Serial | 341 | |||
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Author | Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. | ||||
Title | IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer | Type | Conference Article | ||
Year | 2007 | Publication | Proc. International conference on microwave and millimeter wave technology | Abbreviated Journal | Proc. ICMMT |
Volume | Issue | Pages | 1-3 | ||
Keywords | HEB, mixer, gain bandwidth | ||||
Abstract | In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. | ||||
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Call Number | RPLAB @ lobanovyury @ | Serial | 575 | ||
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Author | Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. | ||||
Title | Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers | Type | Conference Article | ||
Year | 1997 | Publication | Proc. 27th Eur. Microwave Conf. | Abbreviated Journal | |
Volume | 2 | Issue | Pages | 972-977 | |
Keywords | HEB mixer, fabrication process | ||||
Abstract | The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. | ||||
Address | Jerusalem, Israel | ||||
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Publisher | IEEE | Place of Publication | Editor | ||
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Area | Expedition | Conference | 27th Eur. Microwave Conf. | ||
Notes | Approved | no | |||
Call Number | Serial | 1075 | |||
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Author | Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. | ||||
Title | NbN hot electron bolometric mixers for terahertz receivers | Type | Journal Article | ||
Year | 2001 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 11 | Issue | 1 | Pages | 962-965 |
Keywords | NbN HEB mixers | ||||
Abstract | Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. | ||||
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Call Number | Serial | 312 | |||
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