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| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
| Title | Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication | 2Physics | Abbreviated Journal | 2Physics |
| Volume | Issue | Pages | |||
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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| ISSN | 2372-1782 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
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| Author | Лесс, Ю. А.; Кирсанов, Ю. А. | ||||
| Title | Былое и думы. Посвящение эпохе Н. Н. Малова, Е. М. Гершензона, В. С. Эткина | Type | Miscellaneous | ||
| Year | 2015 | Publication | ПРФЛ | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | физфак МПГУ, физфак МГПИ, ПРФЛ | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1132 | |||
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| Author | Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. | ||||
| Title | Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures | Type | Abstract | ||
| Year | 2019 | Publication | Proc. Amorphous and Nanostructured Chalcogenides | Abbreviated Journal | Proc. Amorphous and Nanostructured Chalcogenides |
| Volume | Issue | Pages | 47-48 | ||
| Keywords | optical waveguides | ||||
| Abstract | The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. | ||||
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| Publisher | Technical University of Moldova | Place of Publication | Editor | ||
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| Notes | Poster | Approved | no | ||
| Call Number | Serial | 1281 | |||
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| Author | Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. | ||||
| Title | Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. PIERS | Abbreviated Journal | Proc. PIERS |
| Volume | 1 | Issue | 5 | Pages | 587-590 |
| Keywords | NbN HEB mixers | ||||
| Abstract | In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. | ||||
| Address | Hangzhou, China | ||||
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| ISSN | 1931-7360 | ISBN | Medium | ||
| Area | Expedition | Conference | Progress In Electromagnetics Research Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1482 | |||
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| Author | Елезов, М. С.; Тархов, М. А.; Дивочий, А. В.; Вахтомин, Ю. Б.; Гольцман, Г. Н. | ||||
| Title | Система регистрации одиночных фотонов в видимом и ближнем инфракрасном диапазонах | Type | Conference Article | ||
| Year | 2010 | Publication | Науч. сессия НИЯУ МИФИ | Abbreviated Journal | |
| Volume | Issue | Pages | 94-95 | ||
| Keywords | SSPD | ||||
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| ISSN | ISBN | 978-5-7262-1227-2 | Medium | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ sasha @ елезов2010система | Serial | 1032 | ||
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| Author | Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory | ||||
| Title | Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors | Type | Abstract | ||
| Year | 2020 | Publication | Graphene and 2dm Virt. Conf. | Abbreviated Journal | Graphene and 2DM Virt. Conf. |
| Volume | Issue | Pages | |||
| Keywords | single layer graphene, SLG, CVD, plasmons, FET | ||||
| Abstract | Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. | ||||
| Address | Grenoble, France | ||||
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| Area | Expedition | Conference | Graphene and 2dm Virtual Conference & Expo | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1743 | |||
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| Author | Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Sobolewski, Roman; Minaeva, O.; Kaurova, N.; Korneev, A.; Voronov, B.; Milostnaya, I.; Gol'Tsman, Gregory | ||||
| Title | Nanosecond, transient resistive state in two-dimensional superconducting stripes | Type | Abstract | ||
| Year | 2006 | Publication | Proc. APS March Meeting | Abbreviated Journal | Proc. APS March Meeting |
| Volume | Issue | Pages | H38.13 | ||
| Keywords | NbN stripes | ||||
| Abstract | We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures. | ||||
| Address | Baltimore, MD | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1454 | |||
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| Author | Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr | ||||
| Title | Transition-edge sensors based on superconducting nanowires | Type | Abstract | ||
| Year | 2006 | Publication | Proc. APS March Meeting | Abbreviated Journal | Proc. APS March Meeting |
| Volume | Issue | Pages | B38.00001 | ||
| Keywords | NbN nanowire TES | ||||
| Abstract | We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1455 | |||
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| Author | Kurochkin, V. L.; Zverev, A. V.; Kurochkin, Y. V.; Ryabtsev, I. I.; Neizvestnyi, I. G.; Ozhegov, R. V.; Gol’tsman, G. N.; Larionov, P. A. | ||||
| Title | Long-distance fiber-optic quantum key distribution using superconducting detectors | Type | Conference Article | ||
| Year | 2015 | Publication | Proc. Optoelectron. Instrum. | Abbreviated Journal | Proc. Optoelectron. Instrum. |
| Volume | 51 | Issue | 6 | Pages | 548-552 |
| Keywords | QKD, SSPD, SNSPD | ||||
| Abstract | This paper presents the results of experimental studies on quantum key distribution in optical fiber using superconducting detectors. Key generation was obtained on an experimental setup based on a self-compensation optical circuit with an optical fiber length of 101.1 km. It was first shown that photon polarization encoding can be used for quantum key distribution in optical fiber over a distance in excess of 300 km. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 8756-6990 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1342 | |||
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| Author | Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. | ||||
| Title | Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. MRS | Abbreviated Journal | Proc. MRS |
| Volume | 935 | Issue | Pages | 210 (1 to 6) | |
| Keywords | NbN HEB mixers | ||||
| Abstract | Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0272-9172 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1440 | |||
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