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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics
Volume 48 Issue 6 Pages 671-675
Keywords NbN HEB mixers
Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Corporate Author Thesis
Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no
Call Number Vakhtomin2003 Serial 1522
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Author Смирнов, К. В.
Title AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона Type Abstract
Year 2003 Publication Тезисы докладов VI Российской конференции по физике полупроводников Abbreviated Journal
Volume Issue Pages 181
Keywords 2DEG, AlGaAs/GaAs heterostructures, mixer
Abstract
Address ФТИ им. А. Ф. Иоффе, Санк-Петербург
Corporate Author Thesis
Publisher Place of Publication Editor
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ISSN ISBN Medium
Area Expedition Conference VI Российской конференции по физике полупроводников (27-31 октября)
Notes Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] Approved no
Call Number Serial 1837
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Author Semenov, A.; Engel, A.; Il'in, K.; Gol'tsman, G.; Siegel, M.; Hübers, H.-W.
Title Ultimate performance of a superconducting quantum detector Type Journal Article
Year 2003 Publication Eur. Phys. J. Appl. Phys. Abbreviated Journal Eur. Phys. J. Appl. Phys.
Volume 21 Issue 3 Pages 171-178
Keywords NbN SSPD, SNSPD
Abstract We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1286-0042 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 534
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G.
Title Improved NbN phonon cooled hot electron bolometer mixers Type Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 413-423
Keywords NbN HEB mixers
Abstract NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.
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Publisher Place of Publication Tucson, USA Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 337
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Author Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory
Title Gain bandwidth and noise temperature of NbTiN HEB mixer Type Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 276-285
Keywords NbTiN HEB mixer
Abstract We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
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Publisher Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number Serial 1500
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