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Trifonov, A., Tong, C. - Y. E., Lobanov, Y., Kaurova, N., Blundell, R., & Goltsman, G. (2017). Photon absorption near the gap frequency in a hot electron bolometer. IEEE Trans. Appl. Supercond., 27(4), 1–4.
Abstract: The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
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Tong, C. - Y. E., Trifonov, A., Shurakov, A., Blundell, R., & Gol’tsman, G. (2015). A microwave-operated hot-electron-bolometric power detector for terahertz radiation. IEEE Trans. Appl. Supercond., 25(3), 2300604 (1 to 4).
Abstract: A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.
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Yang, J. K. W., Dauler, E., Ferri, A., Pearlman, A., Verevkin, A., Gol’tsman, G., et al. (2005). Fabrication development for nanowire GHz-counting-rate single-photon detectors. IEEE Trans. Appl. Supercond., 15(2), 626–630.
Abstract: We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity.
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Pearlman, A., Cross, A., Slysz, W., Zhang, J., Verevkin, A., Currie, M., et al. (2005). Gigahertz counting rates of NbN single-photon detectors for quantum communications. IEEE Trans. Appl. Supercond., 15(2), 579–582.
Abstract: We report on the GHz counting rate and jitter of our nanostructured superconducting single-photon detectors (SSPDs). The devices were patterned in 4-nm-thick and about 100-nm-wide NbN meander stripes and covered a 10-/spl mu/m/spl times/10-/spl mu/m area. We were able to count single photons at both the visible and infrared telecommunication wavelengths at rates of over 2 GHz with a timing jitter of below 18 ps. We also present the model for the origin of the SSPD switching dynamics and jitter, based on the time-delay effect in the phase-slip-center formation mechanism during the detector photoresponse process. With further improvements in our readout electronics, we expect that our SSPDs will reach counting rates of up to 10 GHz. An integrated quantum communications receiver based on two fiber-coupled SSPDs and operating at 1550-nm wavelength is also presented.
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Korneev, A., Matvienko, V., Minaeva, O., Milostnaya, I., Rubtsova, I., Chulkova, G., et al. (2005). Quantum efficiency and noise equivalent power of nanostructured, NbN, single-photon detectors in the wavelength range from visible to infrared. IEEE Trans. Appl. Supercond., 15(2), 571–574.
Abstract: We present our studies on the quantum efficiency (QE) and the noise equivalent power (NEP) of the latest-generation, nanostructured, superconducting, single-photon detectors (SSPDs) in the wavelength range from 0.5 to 5.6 /spl mu/m, operated at temperatures in the 2.0- to 4.2-K range. Our detectors are designed as 4-nm-thick and 100-nm-wide NbN meander-shaped stripes, patterned by electron-beam lithography and cover a 10/spl times/10-/spl mu/m/sup 2/ active area. The best-achieved QE at 2.0 K for 1.55-/spl mu/m photons is 17%, and QE for 1.3-/spl mu/m infrared photons reaches its saturation value of /spl sim/30%. The SSPD NEP at 2.0 K is as low as 5/spl times/10/sup -21/ W/Hz/sup -1/2/. Our nanostructured SSPDs, operated at 2.0 K, significantly outperform their semiconducting counterparts, and, together with their GHz counting rate and picosecond timing jitter, they are devices-of-choice for practical quantum key distribution systems and free-space (even interplanetary) quantum optical communications.
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Jiang, L., Li, J., Zhang, W., Yao, Q. J., Lin, Z. L., Shi, S. C., et al. (2005). Characterization of NbN HEB mixers cooled by a close-cycled 4 Kelvin refrigerator. IEEE Trans. Appl. Supercond., 15(2), 511–513.
Abstract: It is quite beneficial to operate superconducting hot-electron-bolometer (HEB) mixers with a close-cycled 4 Kelvin refrigerator for real applications such as astronomy and atmospheric research. In this paper, a phononcooled NbN HEB mixer (quasioptical type) is thoroughly characterized under such a cooling circumstance. The effects of mechanical vibration, electrical interference, and temperature fluctuation of a two-stage Gifford-McMahon 4 Kelvin refrigerator upon the characteristics of the phononcooled NbN HEB mixer are investigated in particular. Detailed measurement results are presented.
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Baubert, J., Salez, M., Merkel, H., Pons, P., Cherednichenko, S., Lecomte, B., et al. (2005). IF gain bandwidth of membrane-based NbN hot electron bolometers for SHAHIRA. IEEE Trans. Appl. Supercond., 15(2), 507–510.
Abstract: SHAHIRA (Submm Heterodyne Array for HIgh-speed Radio Astronomy) is a project supported by the European Space Agency (ESA) and is designed to fly on the SOFIA observatory. A quasi-optic design has been chosen for 2.5/2.7 THz and 4.7 THz, for hydroxyde radical OH, deuterated hydrogen HD and neutral atomic oxygen OI lines observations. Hot electron bolometers (HEBs) have been processed on 1 /spl mu/m thick SiO/sub 2//Si/sub 3/N/sub 4/ stress-less membranes. In this paper we analyse the intermediate frequency (IF) gain bandwidth from the theoretical point of view, and compare it to measurements.
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Loudkov, D., Tong, C. - Y. E., Blundell, R., Kaurova, N., Grishina, E., Voronov, B., et al. (2005). An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance. IEEE Trans. Appl. Supercond., 15(2), 472–475.
Abstract: We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount.
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Gol’tsman, G. N., Smirnov, K., Kouminov, P., Voronov, B., Kaurova, N., Drakinsky, V., et al. (2003). Fabrication of nanostructured superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 192–195.
Abstract: Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Bakhvalova, T., Belkin, M. E., Kovalyuk, V. V., Prokhodtcov, A. I., Goltsman, G. N., & Sigov, A. S. (2019). Studying key principles for design and fabrication of silicon photonic-based beamforming networks. In PIERS-Spring (pp. 745–751).
Abstract: In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
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