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| Author | Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons | Type | Journal Article | ||
| Year | 2008 | Publication | Acta Physica Polonica A | Abbreviated Journal | Acta Physica Polonica A |
| Volume | 113 | Issue | 3 | Pages | 955-958 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1414 | |||
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| Author | Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. | ||||
| Title | NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 5727 | Issue | Pages | 95-106 | |
| Keywords | NbN HEB mixers | ||||
| Abstract | We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter. | ||||
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| Area | Expedition | Conference | Terahertz and Gigahertz Electronics and Photonics IV | ||
| Notes | Approved | no | |||
| Call Number | Serial | 378 | |||
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| Author | Ozhegov, R.; Elezov, M.; Kurochkin, Y.; Kurochkin, V.; Divochiy, A.; Kovalyuk, V.; Vachtomin, Y.; Smirnov, K.; Goltsman, G. | ||||
| Title | Quantum key distribution over 300 | Type | Conference Article | ||
| Year | 2014 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 9440 | Issue | Pages | 1F (1 to 9) | |
| Keywords | SSPD, SNSPD applicatins, quantum key distribution, QKD | ||||
| Abstract | We discuss the possibility of polarization state reconstruction and measurement over 302 km by Superconducting Single- Photon Detectors (SSPDs). Because of the excellent characteristics and the possibility to be effectively coupled to singlemode optical fiber many applications of the SSPD have already been reported. The most impressive one is the quantum key distribution (QKD) over 250 km distance. This demonstration shows further possibilities for the improvement of the characteristics of quantum-cryptographic systems such as increasing the bit rate and the quantum channel length, and decreasing the quantum bit error rate (QBER). This improvement is possible because SSPDs have the best characteristics in comparison with other single-photon detectors. We have demonstrated the possibility of polarization state reconstruction and measurement over 302.5 km with superconducting single-photon detectors. The advantage of an autocompensating optical scheme, also known as “plugandplay” for quantum key distribution, is high stability in the presence of distortions along the line. To increase the distance of quantum key distribution with this optical scheme we implement the superconducting single photon detectors (SSPD). At the 5 MHz pulse repetition frequency and the average photon number equal to 0.4 we measured a 33 bit/s quantum key generation for a 101.7 km single mode ber quantum channel. The extremely low SSPD dark count rate allowed us to keep QBER at 1.6% level. | ||||
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| Publisher | SPIE | Place of Publication | Editor | Orlikovsky, A. A. | |
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| Area | Expedition | Conference | International Conference on Micro- and Nano-Electronics | ||
| Notes | Approved | no | |||
| Call Number | RPLAB @ sasha @ ozhegov2014quantum | Serial | 1048 | ||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory | ||||
| Title | Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Transactions on Applied Superconductivity | Abbreviated Journal | IEEE Transactions on Applied Superconductiv |
| Volume | 27 | Issue | 4 | Pages | 5 |
| Keywords | Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors | ||||
| Abstract | In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1114 | ||
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