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Author Semenov, Alexei; Richter, Heiko; Smirnov, Konstantin; Voronov, Boris; Gol'tsman, Gregory; Hübers, Heinz-Wilhelm doi  openurl
  Title The development of terahertz superconducting hot-electron bolometric mixers Type Journal Article
  Year 2004 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 17 Issue 5 Pages 436-439  
  Keywords NbN HEB mixers  
  Abstract We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model.  
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  Call Number Serial 357  
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Author Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. doi  openurl
  Title Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz Type Journal Article
  Year 1999 Publication Supercond. Sci. Technol. Abbreviated Journal  
  Volume 12 Issue 11 Pages 748-750  
  Keywords NbN HEB mixers  
  Abstract We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz).  
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  Notes Approved no  
  Call Number Serial 298  
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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers Type Journal Article
  Year 2004 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 84 Issue 11 Pages 1958-1960  
  Keywords NbN HEB mixers  
  Abstract We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K

at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
 
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  Notes Approved no  
  Call Number Serial 352  
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Author Khosropanah, P.; Gao, J. R.; Laauwen, W. M.; Hajenius, M; Klapwijk, T. M. openurl 
  Title Low noise NbN hot electron bolometer mixer at 4.3 THz Type Journal Article
  Year 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 91 Issue Pages 221111 (1 to 3)  
  Keywords NbN HEB mixers, NbN, contacts cleaning  
  Abstract We have studied the sensitivity of a superconducting NbN hot electron bolometer mixer integrated with a spiral antenna at 4.3 THz. Using hot/cold blackbody loads and a beam splitter all in vacuum, we measured a double sideband receiver noise temperature of 1300 K at the optimum local oscillator (LO) power of 330 nW, which is about 12 times the quantum noise (hnu/2kB). Our result indicates that there is no sign of degradation of the mixing process at the superterahertz frequencies. Moreover, a measurement method is introduced which allows us for an accurate determination of the sensitivity despite LO power fluctuations.  
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  Notes Approved no  
  Call Number Serial 584  
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. openurl 
  Title Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
  Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 147-148  
  Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth  
  Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.  
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  Notes Approved no  
  Call Number Serial 1175  
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