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Author Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr url  openurl
  Title Transition-edge sensors based on superconducting nanowires Type Abstract
  Year 2006 Publication Proc. APS March Meeting Abbreviated Journal Proc. APS March Meeting  
  Volume Issue Pages B38.00001  
  Keywords NbN nanowire TES  
  Abstract We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well.  
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  Notes Approved no  
  Call Number Serial 1455  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 22 Issue 4 Pages 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
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  Notes Approved no  
  Call Number Serial 1773  
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. url  openurl
  Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
  Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 25 Issue 12 Pages 539-543  
  Keywords Ge, shallow impurities, excited states  
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  Notes Approved no  
  Call Number Serial 1726  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  isbn
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  Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue Pages 369-371  
  Keywords silicon detector, quantum dot, IR, surface states  
  Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.  
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  ISSN ISBN 978-5-89513-451-1 Medium  
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  Notes Approved no  
  Call Number Serial 1154  
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