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Loudkov, D.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. |
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An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance |
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2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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472-475 |
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Keywords |
waveguide NbN HEB mixers |
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Abstract |
We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount. |
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1439677 |
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1464 |
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0kunev, 0.; Dzardanov, A.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E. |
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Title |
NbN hot electron waveguide mixer for 100 GHz operation |
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1994 |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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214-224 |
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waveguide NbN HEB mixers |
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NbN is a promising superconducting material used to develope hot- electron superconducting mixers with an IF bandwidth over 1 GHz. In the 100 GHz frequency range, the following parameters were obtained for NbN films 50 A thick: the noise temperature of the receiver (DSB) 1000 K; the conversion losses 10 d13, the IF bandwidth 1 GHz; the local oscillator power 1 /LW. An increase of NbN film thickness up to 80-100 A and increase of working temperature up to 7-8 K, and a better mixer matching may allow to broader the IF band up to 3 Gllz, to reduce the conversion losses down to 3-5 dB and the noise tempera- ture down to 200-300 K. |
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1644 |
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Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
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Phonon-cooled NbN HEB mixers for submillimeter wavelengths |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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23-28 |
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waveguide NbN HEB mixers |
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The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz. |
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275 |
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Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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Title |
The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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65-72 |
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waveguide NbN HEB mixers |
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We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation. |
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Cambridge, MA, USA |
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Harvard university |
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326 |
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Tong, C.-Y. Edward; Meledin, Denis; Blundell, Raymond; Erickson, Neal; Kawamura, Jonathan; Mehdi, Imran; Gol'tsman, Gregory |
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A 1.5 THz hot-electron bolometer mixer operated by a planar diode-based local oscillator |
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2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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286 |
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waveguide NbN HEB mixers |
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We describe a 1.5 THz heterodyne receiver based on a superconductin g hot-electron bolometer mixer, which is pumped by an all-solid-state local oscillator chain. The bolometer is fabricated from a 3.5 nm-thick niobium nitride film deposited on a quartz substrate with a 200 nm-thick magnesium oxide buffer layer. The bolometer measures 0.15 fun in width and 1.5 1..tm in length. The chip consisting of the bolometer and mixer circuitry is incorporated in a fixed-tuned waveguide mixer block with a corru g ated feed horn. The local oscillator unit comprises of a cascade of four planar doublers followin g a MMIC-based W-band power amplifier. The local oscillator is coupled to the mixer using a Martin-Puplett interferometer. The local oscillator output power needed for optimal receiver performance is approximately 1 to 2 11W, and the chain is able to provide this power at a number of frequency points between 1.45 and 1.56 THz. By terminating the rf input with room temperature and 77 K loads, a Y-factor of 1.11 (DSB) has been measured at a local oscillator frequency of 1.476 THz at 3 GHz intermediate frequency. |
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