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Iomdina, E. N., Goltsman, G. N., Seliverstov, S. V., Sianosyan, A. A., Teplyakova, K. O., & Rusova, A. A. (2016). Study of transmittance and reflectance spectra of the cornea and the sclera in the THz frequency range. J. Biomed. Opt., 21(9), 97002 (1 to 5).
Abstract: An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells: the cornea and the sclera. Adequate control of corneal and scleral hydration is very important for early diagnosis of a variety of eye diseases, stating indications for and contraindications against keratorefractive surgeries and the choice of contact lens correction solutions. THz systems of creating images in reflected beams are likely to become ideal instruments of noninvasive control of corneal and scleral hydration degrees. This paper reports on the results of a study involving transmittance and reflectance spectra for the cornea and the sclera of rabbit and human eyes, as well as those of the rabbit eye, in the frequency range of 0.13 to 0.32 THz. The dependence of the reflectance coefficient of these tissues on water mass percentage content was determined. The experiments were performed on three corneas, three rabbit scleras, two rabbit eyes, and three human scleras. The preliminary results demonstrate that the proposed technique, based on the use of a continuous THz radiation, may be utilized to create a device for noninvasive control of corneal and scleral hydration, which has clear potential of broad practical application.
Keywords: BWO, IMPATT diode, Schottky diode, medicine, animals, cornea, physiology, humans, rabbits, sclera diagnostic imaging, physiology
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Fedorov, G., Gayduchenko, I., Titova, N., Moskotin, M., Obraztsova, E., Rybin, M., et al. (2018). Graphene-based lateral Schottky diodes for detecting terahertz radiation. In F. Berghmans, & A. G. Mignani (Eds.), Proc. Optical Sensing and Detection V (Vol. 10680, pp. 30–39). Spie.
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Shurakov, A., Mikhailov, D., Belikov, I., Kaurova, N., Zilberley, T., Prikhodko, A., et al. (2020). Planar Schottky diode with a Γ-shaped anode suspended bridge. In J. Phys.: Conf. Ser. (Vol. 1695, 012154).
Abstract: In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
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