| Records |
| Author |
Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. |
| Title |
Ultrafast superconducting single-photon detector |
Type |
Journal Article |
| Year |
2009 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
| Volume |
56 |
Issue |
15 |
Pages |
1670-1680 |
| Keywords |
SSPD, SNSPD |
| Abstract |
The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented. |
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| ISSN |
0950-0340 |
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no |
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RPLAB @ akorneev @ |
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607 |
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| Author |
Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
| Title |
Superconducting parallel nanowire detector with photon number resolving functionality |
Type |
Journal Article |
| Year |
2009 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
| Volume |
56 |
Issue |
2-3 |
Pages |
334-344 |
| Keywords |
PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
| Abstract |
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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0950-0340 |
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no |
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RPLAB @ gujma @ |
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701 |
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| Author |
Marsili, F.; Bitauld, D.; Divochiy, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.; Lagoudakis, K.G.; Benkahoul, M.; Lévy, F.; Fiore, A. |
| Title |
Superconducting nanowire photon number resolving detector at telecom wavelength |
Type |
Conference Article |
| Year |
2008 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
| Volume |
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Issue |
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Pages |
Qmj1 (1 to 2) |
| Keywords |
PNR SSPD; SNSPD; Detectors; Infrared; Low light level; Diode lasers; Photons; Scanning electron microscopy; Superconductors; Ti:sapphire lasers |
| Abstract |
We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches. |
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Optical Society of America |
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978-1-55752-859-9 |
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no |
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Marsili:08 |
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1243 |
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| Author |
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
| Title |
Helicity-sensitive plasmonic terahertz interferometer |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
| Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
| Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
| Abstract |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
| Address |
CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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Edition |
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1530-6984 |
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PMID:32903004 |
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no |
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Serial |
1781 |
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| Author |
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nanomaterials (Basel) |
Abbreviated Journal |
Nanomaterials (Basel) |
| Volume |
10 |
Issue |
5 |
Pages |
1-12 |
| Keywords |
detector; quantum dots; short-wave infrared range; silicon |
| Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
| Address |
Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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no |
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Serial |
1151 |
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Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. |
| Title |
Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits |
Type |
Journal Article |
| Year |
2013 |
Publication |
Opt. Express |
Abbreviated Journal |
Opt. Express |
| Volume |
21 |
Issue |
19 |
Pages |
22683-22692 |
| Keywords |
SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides |
| Abstract |
We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits. |
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1094-4087 |
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PMID:24104155 |
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no |
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Serial |
1213 |
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| Author |
Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
| Title |
Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. PIERS |
Abbreviated Journal |
Proc. PIERS |
| Volume |
1 |
Issue |
5 |
Pages |
587-590 |
| Keywords |
NbN HEB mixers |
| Abstract |
In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. |
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Hangzhou, China |
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1931-7360 |
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Progress In Electromagnetics Research Symposium |
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no |
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Serial |
1482 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Sobolewski, Roman; Minaeva, O.; Kaurova, N.; Korneev, A.; Voronov, B.; Milostnaya, I.; Gol'Tsman, Gregory |
| Title |
Nanosecond, transient resistive state in two-dimensional superconducting stripes |
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Abstract |
| Year |
2006 |
Publication |
Proc. APS March Meeting |
Abbreviated Journal |
Proc. APS March Meeting |
| Volume |
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Issue |
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Pages |
H38.13 |
| Keywords |
NbN stripes |
| Abstract |
We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures. |
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Baltimore, MD |
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no |
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Serial |
1454 |
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Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. |
| Title |
Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. MRS |
Abbreviated Journal |
Proc. MRS |
| Volume |
935 |
Issue |
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Pages |
210 (1 to 6) |
| Keywords |
NbN HEB mixers |
| Abstract |
Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz. |
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0272-9172 |
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no |
| Call Number |
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Serial |
1440 |
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Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. |
| Title |
Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer |
Type |
Journal Article |
| Year |
2010 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
| Volume |
36 |
Issue |
12 |
Pages |
1103-1105 |
| Keywords |
NbN HEB mixer |
| Abstract |
Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW. |
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Edition |
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1063-7850 |
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no |
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1389 |
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