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| Author | Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 10004 (1 to 2) | |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1351 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Response of graphene based gated nanodevices exposed to THz radiation | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 10003 (1 to 2) | |
| Keywords | graphene field-effect transistor, FET | ||||
| Abstract | In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1350 | |||
| Permanent link to this record | |||||
| Author | Elezov, M. S.; Ozhegov, R. V.; Kurochkin, Y. V.; Goltsman, G. N.; Makarov, V. S.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Countermeasures against blinding attack on superconducting nanowire detectors for QKD | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 103 | Issue | Pages | 10002 (1 to 2) | |
| Keywords | SSPD, SNSPD, QKD | ||||
| Abstract | Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1352 | |||
| Permanent link to this record | |||||
| Author | Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | New generation of superconducting nanowire single-photon detectors | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 01006 (1 to 2) | |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device. | ||||
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| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1349 | |||
| Permanent link to this record | |||||
| Author | Смирнов, Константин Владимирович | ||||
| Title | Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе | Type | Manuscript | ||
| Year | 2000 | Publication | М. МПГУ | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, NbN films | ||||
| Abstract | Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. | ||||
| Address | Москва, МПГУ | ||||
| Corporate Author | Thesis | Ph.D. thesis | |||
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| Notes | Approved | no | |||
| Call Number | Serial | 1830 | |||
| Permanent link to this record | |||||
| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
| Title | Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication | 2Physics | Abbreviated Journal | 2Physics |
| Volume | Issue | Pages | |||
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2372-1782 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
| Permanent link to this record | |||||
| Author | Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz | Type | Journal Article | ||
| Year | 2004 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 17 | Issue | 5 | Pages | S224-S228 |
| Keywords | NbN HEB mixers | ||||
| Abstract | NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 558 | |||
| Permanent link to this record | |||||
| Author | Semenov, Alexei D; Gol'tsman, Gregory N; Sobolewski, Roman | ||||
| Title | Hot-electron effect in superconductors and its applications for radiation sensors | Type | Journal Article | ||
| Year | 2002 | Publication | Superconductor Science and Technology | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 15 | Issue | 4 | Pages | R1-R16 |
| Keywords | HEB, SSPD | ||||
| Abstract | The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters. | ||||
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| ISSN | 0953-2048 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 416 | |||
| Permanent link to this record | |||||
| Author | Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. | ||||
| Title | New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect | Type | Journal Article | ||
| Year | 2001 | Publication | J. Vac. Sci. Technol. B | Abbreviated Journal | J. Vac. Sci. Technol. B |
| Volume | 19 | Issue | 6 | Pages | 2766-2769 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. | ||||
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| ISSN | 0734211X | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1542 | |||
| Permanent link to this record | |||||
| Author | Лесс, Ю. А.; Кирсанов, Ю. А. | ||||
| Title | Былое и думы. Посвящение эпохе Н. Н. Малова, Е. М. Гершензона, В. С. Эткина | Type | Miscellaneous | ||
| Year | 2015 | Publication | ПРФЛ | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | физфак МПГУ, физфак МГПИ, ПРФЛ | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1132 | |||
| Permanent link to this record | |||||