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Kitaygorsky, J.; Zhang, J.; Verevkin, A.; Sergeev, A.; Korneev, A.; Matvienko, V.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Sobolewski, R. |
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Title |
Origin of dark counts in nanostructured NbN single-photon detectors |
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Journal Article |
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2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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545-548 |
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Keywords |
SSPD dark counts, SNSPD, dark counts rate |
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We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations. |
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1057 |
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Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
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Title |
Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
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Journal Article |
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2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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495-498 |
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Keywords |
HEB mixer distributed model, HEB distributed model, distributed HEB model |
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Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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980 |
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Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer |
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Journal Article |
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2003 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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13 |
Issue |
2 |
Pages |
164-167 |
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Keywords |
NbN HEB mixer |
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In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions. |
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341 |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
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Title |
NbN hot electron bolometric mixers for terahertz receivers |
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2001 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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11 |
Issue |
1 |
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962-965 |
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Keywords |
NbN HEB mixers |
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Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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312 |
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Galeazzi, Massimiliano |
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Title |
Fundamental noise processes in TES devices |
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2011 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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21 |
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3 |
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267-271 |
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Keywords |
TES, Johnson noise, phonon noise, excess noise, flux-flow noise, thermal fluctuation noise |
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Microcalorimeters and bolometers are noise-limited devices, therefore, a proper understanding of all noise sources is essential to predict and interpret their performance. In this paper, I review the fundamental noise processes contributing to Transition Edge Sensor (TES) microcalorimeters and bolometers and their effect on device performance. In particular, I will start with a simple, monolithic device model, moving to a more complex one involving discrete components, to finally move to today's more realistic, comprehensive model. In addition to the basic noise contribution (equilibrium Johnson noise and phonon noise), TES are significantly affected by extra noise, which is commonly referred to as excess noise. Different fundamental processes have been proposed and investigated to explain the origin of this excess noise, in particular near equilibrium non-linear Johnson noise, flux-flow noise, and internal thermal fluctuation noise. Experimental evidence shows that all three processes are real and contribute, at different levels, to the TES noise, although different processes become important at different regimes. It is therefore time to discard the term “excess noise” and consider these terms part of the “fundamental noise processes” instead. |
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Recommended by Klapwijk |
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914 |
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