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Author |
Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. |
Title |
Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation |
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Journal Article |
Year |
2000 |
Publication |
IEEE Trans. Microw. Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microw. Theory Techn. |
Volume |
48 |
Issue |
4 |
Pages |
683-689 |
Keywords |
NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range |
Abstract |
In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season. |
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0018-9480 |
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RPLAB @ lobanovyury @ |
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573 |
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Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
Type |
Journal Article |
Year |
1989 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
50 |
Issue |
5 |
Pages |
283-286 |
Keywords |
YBCO HTS films |
Abstract |
The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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1690 |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
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Journal Article |
Year |
1995 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
61 |
Issue |
7 |
Pages |
591-595 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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1624 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
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Journal Article |
Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
46 |
Issue |
5 |
Pages |
237-238 |
Keywords |
YBCO HTS detectors |
Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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1703 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
Title |
Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
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Journal Article |
Year |
1987 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
46 |
Issue |
6 |
Pages |
285-287 |
Keywords |
YBCO HTS HEB |
Abstract |
For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
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1706 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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Journal Article |
Year |
1982 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
36 |
Issue |
7 |
Pages |
296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
25 |
Issue |
12 |
Pages |
539-543 |
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Ge, shallow impurities, excited states |
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1726 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Title |
Cross section for binding of free carriers into excitons in germanium |
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Journal Article |
Year |
1981 |
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JETP Lett. |
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JETP Lett. |
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33 |
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11 |
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574 |
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Ge, excitons, photoconductivity |
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1718 |
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Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Heating of quasiparticles in a superconducting film in the resistive state |
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Journal Article |
Year |
1981 |
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JETP Lett. |
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JETP Lett. |
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34 |
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5 |
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268-271 |
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1716 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Transitions of electrons between excited states of donors in germanium |
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Journal Article |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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2 |
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63-65 |
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Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Journal Article |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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5 |
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185-186 |
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Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Journal Article |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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6 |
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241 |
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Ge, gamma irradiation, defects, impurities |
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1742 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
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1972 |
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JETP Lett. |
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JETP Lett. |
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16 |
Issue |
4 |
Pages |
161-162 |
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Ge, energy spectrum, free excitons |
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1736 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Title |
Energy spectrum of free excitons in germanium |
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Journal Article |
Year |
1973 |
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JETP Lett. |
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JETP Lett. |
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18 |
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3 |
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93 |
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Ge, free excitons, energy spectrum |
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1734 |
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Korneev, A.; Kouminov, P.; Matvienko, V.; Chulkova, G.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Currie, M.; Lo, W.; Wilsher, K.; Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, Roman |
Title |
Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors |
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Journal Article |
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2004 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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84 |
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26 |
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5338-5340 |
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SSPD, NEP, QE |
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We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength. |
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