|
Records |
Links ![sorted by URL field, descending order (down)](img/sort_desc.gif) |
|
Author |
Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
NbN hot electron bolometer mixers with superior performance for space applications |
Type |
Conference Article |
|
Year |
2004 |
Publication |
Proc. Int. workshop on low temp. electronics |
Abbreviated Journal |
Proc. Int. workshop on low temp. electronics |
|
|
Volume |
|
Issue |
|
Pages |
11-17 |
|
|
Keywords |
NbN HEB mixers, applications |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Noordwijk |
Editor |
Armandillo, E.; Leone, B. |
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
International workshop on low temperature electronics- WOLTE 6 - Noordwijk |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1496 |
|
Permanent link to this record |
|
|
|
|
Author |
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
Type |
Journal Article |
|
Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
|
|
Volume |
48 |
Issue |
6 |
Pages |
671-675 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
MAIK Nauka/Interperiodica, Birmingham, AL |
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1064-2269 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
Approved |
no |
|
|
Call Number |
Vakhtomin2003 |
Serial |
1522 |
|
Permanent link to this record |
|
|
|
|
Author |
Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Hot electron bolometric mixers: new terahertz technology |
Type |
Journal Article |
|
Year |
1999 |
Publication |
Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
|
|
Volume |
40 |
Issue |
3 |
Pages |
199-206 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1350-4495 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1570 |
|
Permanent link to this record |
|
|
|
|
Author |
Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
Type |
Journal Article |
|
Year |
2001 |
Publication |
Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
|
|
Volume |
42 |
Issue |
1 |
Pages |
41-47 |
|
|
Keywords |
NbN HEB mixers, anti-reflection coating |
|
|
Abstract |
Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1350-4495 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1548 |
|
Permanent link to this record |
|
|
|
|
Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
Type |
Journal Article |
|
Year |
1999 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
|
|
Volume |
6 |
Issue |
10-12 |
Pages |
649-655 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0964-1807 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1564 |
|
Permanent link to this record |