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Author Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Silicon nitride focusing grating coupler for input and output light of NV-centers Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume (up) Issue Pages 349-353  
  Keywords NV-centers, focusing grating coupler  
  Abstract Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing.  
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  Language Summary Language Original Title  
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  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1841  
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Author Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory url  openurl
  Title Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors Type Abstract
  Year 2020 Publication Graphene and 2dm Virt. Conf. Abbreviated Journal Graphene and 2DM Virt. Conf.  
  Volume (up) Issue Pages  
  Keywords single layer graphene, SLG, CVD, plasmons, FET  
  Abstract Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.  
  Address Grenoble, France  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference Graphene and 2dm Virtual Conference & Expo  
  Notes Approved no  
  Call Number Serial 1743  
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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Integrated contra-directional coupler for NV-centers photon filtering Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume (up) Issue Pages 354-360  
  Keywords NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings  
  Abstract We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1839  
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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume (up) Issue Pages 344-348  
  Keywords  
  Abstract The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.  
  Address NV-centers, nanodiamonds  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1840  
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Author Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector Type Journal Article
  Year 2020 Publication Nanomaterials (Basel) Abbreviated Journal Nanomaterials (Basel)  
  Volume (up) 10 Issue 5 Pages 1-12  
  Keywords detector; quantum dots; short-wave infrared range; silicon  
  Abstract In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.  
  Address Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia  
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  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2079-4991 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:32365694; PMCID:PMC7712218 Approved no  
  Call Number Serial 1151  
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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. url  doi
openurl 
  Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
  Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.  
  Volume (up) 10 Issue 1 Pages 16819  
  Keywords VN HEB  
  Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.  
  Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia  
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  Series Volume Series Issue Edition  
  ISSN 2045-2322 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:33033360; PMCID:PMC7546726 Approved no  
  Call Number Serial 1797  
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Author Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. url  doi
openurl 
  Title THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites Type Journal Article
  Year 2020 Publication Polymers (Basel) Abbreviated Journal Polymers (Basel)  
  Volume (up) 12 Issue 12 Pages 3037 (1 to 14)  
  Keywords THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS  
  Abstract Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed.  
  Address Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland  
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  Series Volume Series Issue Edition  
  ISSN 2073-4360 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:33353036; PMCID:PMC7767186 Approved no  
  Call Number Serial 1780  
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Author Korneeva, Y. P.; Manova, N. N.; Florya, I. N.; Mikhailov, M. Y.; Dobrovolskiy, O. V.; Korneev, A. A.; Vodolazov, D. Y. url  doi
openurl 
  Title Different single-photon response of wide and narrow superconducting MoxSi1−x strips Type Journal Article
  Year 2020 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume (up) 13 Issue 2 Pages 024011 (1 to 7)  
  Keywords MoSi SSPD, SNSPD  
  Abstract The photon count rate (PCR) of superconducting single-photon detectors made of MoxSi1−x films shaped as a 2-μm-wide strip and a 115-nm-wide meander strip line is studied experimentally as a function of the dc biasing current at different values of the perpendicular magnetic field. For the wide strip, a crossover current Icross is observed, below which the PCR increases with an increasing magnetic field and above which it decreases. This behavior contrasts with the narrow MoxSi1−x meander, for which no crossover current is observed, thus suggesting different photon-detection mechanisms in the wide and narrow strips. Namely, we argue that in the wide strip the absorbed photon destroys superconductivity locally via the vortex-antivortex mechanism for the emergence of resistance, while in the narrow meander superconductivity is destroyed across the whole strip line, forming a hot belt. Accordingly, the different photon-detection mechanisms associated with vortices and the hot belt determine the qualitative difference in the dependence of the PCR on the magnetic field.  
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  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1790  
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Author Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. url  doi
openurl 
  Title Timing jitter in NbN superconducting microstrip single-photon detector Type Journal Article
  Year 2020 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume (up) 14 Issue 4 Pages 044041 (1 to 8)  
  Keywords NbN SSPD, SNSPD  
  Abstract We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip.  
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  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1788  
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Author Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. url  doi
openurl 
  Title Helicity-sensitive plasmonic terahertz interferometer Type Journal Article
  Year 2020 Publication Nano Lett. Abbreviated Journal Nano Lett.  
  Volume (up) 20 Issue 10 Pages 7296-7303  
  Keywords graphene, plasmonic interferometer, radiation helicity, terahertz radiation  
  Abstract Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.  
  Address CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland  
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  Series Volume Series Issue Edition  
  ISSN 1530-6984 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:32903004 Approved no  
  Call Number Serial 1781  
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