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Yagubov, P., Gol'tsman, G., Voronov, B., Seidman, L., Siomash, V., Cherednichenko, S., et al. (1996). The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 290–302). Charlottesville, Virginia, USA.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Cherednichenko, S., Yagoubov, P., Il'In, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 245–257).
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Phonon-cooled NbN HEB mixers for submillimeter wavelengths. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 23–28).
Abstract: The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
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Gerecht, E., Musante, C. F., Jian, H., Yngvesson, K. S., Dickinson, J., Waldman, J., et al. (1998). Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 105–114).
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Semenov, A. D., Hübers, H. –W., Schubert, J., Gol'tsman, G. N., Elantiev, A. I., Voronov, B. M., et al. (2000). Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer. In Proc. 11th Int. Symp. Space Terahertz Technol. (pp. 39–48).
Abstract: We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
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Cherednichenko, S., Kroug, M., Merkel, H., Kollberg, E., Loudkov, D., Smirnov, K., et al. (2001). Local oscillator power requirement and saturation effects in NbN HEB mixers. In C. Iit.u.t.e of T. Jet Propulsion Laboratory (Ed.), Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 273–285). San Diego, CA, USA.
Abstract: The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics.
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Hübers, H. - W., Semenov, A. D., Richter, H., Schubert, J., Hadjiloucas, S., Bowen, J. W., et al. (2001). Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 286–296). San Diego, CA, USA.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Golts'man, G., Gershenzon, E., & Voronov B. (1996). Superconductive NbN hot-electron bolometric mixer performance at 250 GHz. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 331–336).
Abstract: Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity.
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Cherednichenko, S., Ronnung, F., Gol'tsman, G., Gershenzon, E., & Winkler, D. (1999). YBa2Cu3O7-δ hot-electron bolometer with submicron dimensions. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 181–189).
Abstract: Photoresponse of YBa2Cu3O7-δ hot-electron bolometers to modulated near-infrared radiation was studied at a modulation .frequenc y var y ing from 0.2 MHz to 2 GHz. Bolometers were _fabricated from a 50 12 M thick film and had in-plane areas of 10x10 , um 2 . 2x0.2 s um', 1x0.2 p.m', and 0.5x0.2 jim. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one.
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Schubert, J., Semenov, A., Gol'tsman, G., Hübers, H. - W., Schwaab, G., Voronov, B., et al. (1999). Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 190–199).
Abstract: We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit.
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Gerecht, E., Musante, C. F., Jian, H., Zhuang, Y., Yngvesson, K. S., Dickinson, J., et al. (1999). Improved characteristics of NbN HEB mixers integrated with log-periodic antennas. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 200–207).
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Hübers, H. - W., Schubert, J., et al. (1999). NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 238–246).
Abstract: The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported.
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Schwaab, G. W., Hübers, H. - W., Schubert, J., Erichsen, P., Gol'tsman, G., Semenov, A., et al. (1999). A high resolution spectrometer for the investigation of molecular structures in the THZ range. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 530–538).
Abstract: A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%.
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Blundell, R., Kawamura, J. H., Tong, C. E., Papa, D. C., Hunter, T. R., Gol’tsman, G. N., et al. (1998). A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range. In Proc. 6-th Int. Conf. Terahertz Electron. (pp. 18–20). IEEE.
Abstract: We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. - W., et al. (1998). Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies. In Proc. 6-th Int. Conf. Terahertz Electron. (pp. 149–152).
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.
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