|
Author |
Title |
Year |
Publication |
Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
Pages |
Links |
|
Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. |
Probing the stability of HEB mixers with microwave injection |
2015 |
IEEE Trans. Appl. Supercond. |
25 |
2300404 (1 to 4) |
|
|
Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. |
A microwave-operated hot-electron-bolometric power detector for terahertz radiation |
2015 |
IEEE Trans. Appl. Supercond. |
25 |
2300604 (1 to 4) |
|
|
Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
Механизм преобразования частоты в n-InSb-смесителе |
1991 |
Физика и техника полупроводников |
25 |
1986-1998 |
|
|
Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
2017 |
IEEE Trans. Appl. Supercond. |
27 |
6 |
|
|
Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
Superconductivity in highly disordered NbN nanowires |
2016 |
Nanotechnol. |
27 |
47lt02 (1 to 8) |
|
|
Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
2017 |
IEEE Trans. Appl. Supercond. |
27 |
1-5 |
|
|
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Photon absorption near the gap frequency in a hot electron bolometer |
2017 |
IEEE Trans. Appl. Supercond. |
27 |
1-4 |
|
|
Jang, Young Rae; Yoo, Keon-Ho; Park, Seung Min |
Rapid thermal annealing of ZnO thin films grown at room temperature |
2010 |
J. Vac. Sci. Technol. A |
28 |
4 |
|
|
Kinch, M. A.; Wan, C.-F., Beck, J. D. |
1/f noise in HgCdTe photodiodes |
2005 |
J. Electron. Mater. |
34 |
928-932 |
|
|
Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee |
Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications |
1994 |
IEEE Trans. Electron Devices |
41 |
1489-1497 |
|