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Author |
Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. |
Title |
Electron-phonon relaxation time in ultrathin tungsten silicon film |
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Miscellaneous |
Year |
2018 |
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arXiv |
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WSi film |
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Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K. |
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Duplicated as 1341 |
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1340 |
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Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N. |
Title |
Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film |
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Miscellaneous |
Year |
2018 |
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arXiv |
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WSi films, diffusion constant, SSPD, SNSPD |
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We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques. |
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Duplicated as 1305 |
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1341 |
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Murphy, A.; Semenov, A.; Korneev, A.; Korneeva, Y.; Gol’tsman, G.; Bezryadin, A. |
Title |
Dark counts initiated by macroscopic quantum tunneling in NbN superconducting photon detectors |
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Miscellaneous |
Year |
2014 |
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arXiv |
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NbN SSPD |
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We perform measurements of the switching current distributions of three w = 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. |
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murphy2014dark |
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1356 |
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Jian Wei; David Olaya; Boris Karasik; Sergey Pereverzev; Andrei Sergeev; Michael Gershenson |
Title |
Ultra-sensitive hot-electron nanobolometers for terahertz astrophysics |
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Journal Article |
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2007 |
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ArXiv e-prints |
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710 |
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cond-mat.other; astro-ph; cond-mat.mes-hall |
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The background-limited spectral imaging of the early Universe requires spaceborne terahertz (THz) detectors with the sensitivity 2-3 orders of magnitude better than that of the state-of-the-art bolometers. To realize this sensitivity without sacrificing operating speed, novel detector designs should combine an ultrasmall heat capacity of a sensor with its unique thermal isolation. Quantum effects in thermal transport at nanoscale put strong limitations on the further improvement of traditional membrane-supported bolometers. Here we demonstrate an innovative approach by developing superconducting hot-electron nanobolometers in which the electrons are cooled only due to a weak electron-phonon interaction. At T<0.1K, the electron-phonon thermal conductance in these nanodevices becomes less than one percent of the quantum of thermal conductance. The hot-electron nanobolometers, sufficiently sensitive for registering single THz photons, are very promising for submillimeter astronomy and other applications based on quantum calorimetry and photon counting. |
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arXiv:0710.5474v1; 19 pages, 3 color figures |
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RPLAB @ s @ |
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407 |
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Ovchinnikov, Yu. N.; Varlamov, A. A. |
Title |
Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical |
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Journal Article |
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2009 |
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arXiv |
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0910.2659v1 |
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1-4 |
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superconducting nanowire, resistance calculation |
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The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding voltage is found as the function of temperature (close to transition temperature) and arbitrary bias current. It is demonstrated that the value of the activation energy (exponential factor in the Arrenius law) when current approaches to the critical one is proportional to (1-J/Jc)^(5/4). This result is in concordance with the one for the affine phenomenon of the Josephson current decay due to the thermal phase fluctuations, where the activation energy proportional (1-J/J_c)^(3/2)(the difference in the exponents is related to the additional current dependence of the order parameter). Found dependence of the activation energy on current explains the enormous discrepancy between the theoretically predicted before and the experimentally observed broadening of the resistive transition. |
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arXiv:0910.2659v1; 4 pages, 3 figures |
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931 |
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Pernice, W.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
Title |
High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
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Miscellaneous |
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2012 |
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arXiv |
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arXiv |
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1108.5299 |
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1-23 |
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optical waveguides, waveguide SSPD, guantum photonics, jitter, detection efficiency |
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Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. |
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Sprengers, J.P.; Gaggero, A.; Sahin, D.; Nejad, S. Jahanmiri; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A. |
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Waveguide single-photon detectors for integrated quantum photonic circuits |
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Conference Article |
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2011 |
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arXiv |
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arXiv |
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1108.5107 |
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1-11 |
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optical waveguides, waveguide SSPD |
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The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and single-photon detectors enables quantum repeaters and qubit amplifiers, and also forms the basis of all-optical quantum gates and of linear-optics quantum computing. However, the monolithic integration of sources, waveguides and detectors on the same chip, as needed for scaling to meaningful number of qubits, is very challenging, and previous work on quantum photonic circuits has used external sources and detectors. Here we propose an approach to a fully-integrated quantum photonic circuit on a semiconductor chip, and demonstrate a key component of such circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (20%) at telecom wavelengths, high timing accuracy (60 ps), response time in the ns range, and are fully compatible with the integration of single-photon sources, passive networks and modulators. |
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846 |
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Maslennikov, S. |
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RF heating efficiency of the terahertz superconducting hot-electron bolometer |
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Journal Article |
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2014 |
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arXiv |
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arXiv |
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1404.5276 |
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1-4 |
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superconducting hot-electron bolometer mixer, HEB, NbN, distributed model, HEB model, HEB mixer model, heat balance equa-tions, conversion gain, RF heating efficiency, noise temperature, simulation, Euler method |
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We report results of the numerical solution by the Euler method of the system of heat balance equations written in recurrent form for the superconducting hot-electron bolometer (HEB) embedded in an electrical circuit. By taking into account the dependence of the HEB resistance on the transport current we have been able to calculate rigorously the RF heating efficiency, absorbed local oscillator (LO) power and conversion gain of the HEB mixer. We show that the calculated conversion gai nis in excellent agreement with the experimental results, and that the substitution of the calculated RF heating efficiency and absorbed LO power into the expressions for the conversion gain and noise temperature given by the analytical small-signal model of the HEB yields excellent agreement with the corresponding measured values |
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RPLAB @ atomics90 @ |
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954 |
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