Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Morozov, P. V., Seleznev, V. A., & Smirnov, K. V. (2017). Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range. In J. Phys.: Conf. Ser. (Vol. 917, 062037).
Abstract: We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Lubenchenko, A. V., Morozov, P. V., Shurkaeva, I. V., et al. (2018). Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films. In J. Phys.: Conf. Ser. (Vol. 1124, 051030).
Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
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Romanov, N. R., Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., & Smirnov, K. V. (2018). Electron diffusivity measurements of VN superconducting single-photon detectors. In J. Phys.: Conf. Ser. (Vol. 1124, 051032).
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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