Gershenzon, E. M., Gershenson, M. E., Goltsman, G. N., Lyulkin, A. M., Semenov, A. D., & Sergeev, A. V. (1989). Limiting characteristics of fast-response superconducting bolometers. Zhurnal Tekhnicheskoi Fiziki, 59(2), 11–120.
Abstract: Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
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Semenov, A. D., Gol’tsman, G. N., Gogidze, I. G., Sergeev, A. V., Gershenzon, E. M., Lang, P. T., et al. (1992). Subnanosecond photoresponse of a YBaCuO thin film to infrared and visible radiation by quasiparticle induced suppression of superconductivity. Appl. Phys. Lett., 60(7), 903–905.
Abstract: We observed subnanosecond photoresponse of a structured superconducting YBa2Cu3O7−δ thin film to infrared and visible radiation. We measured the voltage response of a current biased film (thickness 700 Å) in a resistive state to radiation pulses. From our results we conclude a response time of about 90 ps and a responsivity of about 4×1010 Ω/J. We attribute the response to Cooper pair breaking and suppression of the superconducting energy gap induced by nonequilibrium quasiparticles.
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Semenov, A. D., Goghidze, I. G., Gol’tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1993). Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films. Appl. Phys. Lett., 63(5), 681–683.
Abstract: The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
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Gershenzon, E. M., Gershenzon, M. E., Goltsman, G. N., Lulkin, A., Semenov, A. D., & Sergeev, A. V. (1990). Electron-phonon interaction in ultrathin Nb films. Sov. Phys. JETP, 70(3), 505–511.
Abstract: A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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Gershenzon, E. M., Gol'tsman, G. N., Potapov, V. D., & Sergeev, A. V. (1990). Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction. Solid State Communications, 75(8), 639–641.
Abstract: Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.
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Gershenzon, E. M., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1990). Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation. Solid State Communications, 76(4), 493–497.
Abstract: The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
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Gershenson, M. E., Gong, D., Sato, T., Karasik, B. S., & Sergeev, A. V. (2001). Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures. Appl. Phys. Lett., 79, 2049–2051.
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Gol’tsman, G. N., Semenov, A. D., Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., & Gershenzon, E. M. (1993). Electron-phonon interaction in thin YBaCuO films and fast detectors. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 184–185).
Abstract: The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
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Sergeev, A. V., & Livanov, D. V. (1993). Phonon renormalization of thermoelectric power of high-Tc materials. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 204–205).
Abstract: Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains.
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Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., Gol’tsman, G. N., Semenov, A. D., & Gershenzon, E. M. (1993). Thermal boundary resistance at YBaCuO film-substrate interface. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 405–406).
Abstract: The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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