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Author Title Year Publication Volume (up) Pages
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. Character of submillimeter photoconductivity in n-lnSb 1979 Sov. Phys. JETP 49 121-128
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Population and lifetime of excited states of shallow impurities in Ge 1979 Sov. Phys. JETP 49 355-362
Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures 1989 JETP Lett. 50 283-286
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. Capture of photoexcited carriers by shallow impurity centers in germanium 1979 Sov. Phys. JETP 50 728-734
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of electron and hole binding into excitons in germanium 1983 Sov. Phys. JETP 57 369-376
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Heating of electrons in a superconductor in the resistive state by electromagnetic radiation 1984 Sov. Phys. JETP 59 442-450
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures 1995 JETP Lett. 61 591-595
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium 1986 Sov. Phys. JETP 64 889-897
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. The excitonic Zeeman effect in uniaxially-strained germanium 1987 Sov. Phys. JETP 65 1233-1241