Records |
Author |
Godunova, E. K.; Levin, V. I. |
Title |
Some general features of heat conduction |
Type |
Journal Article |
Year |
1966 |
Publication |
USSR Computational Mathematics and Mathematical Physics |
Abbreviated Journal |
USSR Computational Mathematics and Mathematical Physics |
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6 |
Issue |
6 |
Pages |
212-220 |
Keywords |
mathematics, temperature distribution, rod |
Abstract |
LET the initial temperature distribution in an infinite insulated rod without a heat source be given by a continuously differentiable function y = f(x), having a single maximum at x = 0 and two points of inflexion. The equation f′ = 0 then has a unique solution x = 0, where f′(x) > 0 for x < 0 and f′(x) < 0 for x > 0, We shall describe this as a one-hymped distribution. We shall assume that f/(x) also satisfies: (1) f(x) > 0 for − ∞ < x < ∞; (2) f(x) and x(fx) are integrable throughout the axis. Then the distribution remains one-humped for all t > 0. |
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0041-5553 |
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Некоторые качественные вопросы теплопроводности; Одногорбое распределение останется одногорбым |
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1701 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
6 |
Issue |
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Pages |
362-363 |
Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Author |
Klapwijk, T. M.; Semenov, A. V. |
Title |
Engineering physics of superconducting hot-electron bolometer mixers |
Type |
Journal Article |
Year |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
6 |
Pages |
627-648 |
Keywords |
HEB mixers |
Abstract |
Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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1292 |
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Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N. |
Title |
Superconducting detector for visible and near-infrared quantum emitters [Invited] |
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Journal Article |
Year |
2017 |
Publication |
Opt. Mater. Express |
Abbreviated Journal |
Opt. Mater. Express |
Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
2 |
Pages |
513-526 |
Keywords |
SSPD, SNSPD |
Abstract |
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial. |
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2159-3930 |
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1234 |
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Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
Title |
Performance of THz components based on microstrip PECVD SiNx technology |
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Journal Article |
Year |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
6 |
Pages |
765-771 |
Keywords |
transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
Abstract |
We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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2156-342X |
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Call Number |
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1294 |
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