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Author Флоря, И. Н.
Title Ультрабыстрый однофотонный детектор для оптических применений Type Conference Article
Year 2009 Publication Науч. сессия МИФИ Abbreviated Journal Науч. сессия МИФИ
Volume (up) Issue Pages 45-46
Keywords SSPD
Abstract Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-7262-1042-1 Medium
Area Expedition Conference
Notes УДК 533.14(06)+004.056(06) Фотоника и информационная оптика Approved no
Call Number Serial 1145
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Author Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace (eds)
Title Everything: Rocks and Minerals Type Book Whole
Year 2011 Publication Nat. Geogr. Partners Abbreviated Journal
Volume (up) Issue Pages 1-64
Keywords children
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1146
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Author O'Neal, Claire
Title A project guide to rocks and minerals Type Book Whole
Year 2010 Publication Mitchell Lane Publishers Abbreviated Journal
Volume (up) Issue Pages 1-47
Keywords children
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1147
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Author Семенов, Александр Владимирович
Title Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников Type Manuscript
Year 2010 Publication М. МПГУ Abbreviated Journal
Volume (up) Issue Pages
Keywords SSPD, SNSPD, response
Abstract
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Corporate Author Thesis Ph.D. thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1150
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume (up) Issue Pages 369-371
Keywords silicon detector, quantum dot, IR, surface states
Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-89513-451-1 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1154
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