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Author Codreanu, Iulian; Boreman, Glenn D.
Title Infrared microstrip dipole antennas Type Journal Article
Year 2001 Publication Microwave and Optical Technology Letters Abbreviated Journal Microw Opt Technol Lett
Volume (up) 29 Issue 6 Pages 381-383
Keywords optical antennas
Abstract Abstract 10.1002/mop.1184.abs We report on the successful use of niobium microbolometers coupled to microstrip dipole antennas for the detection of midinfrared radiation. Measurements of the detector response versus antenna length performed at the 10.6 μm wavelength allowed us to identify the first three current-wave resonances along the antenna arms. The detector response was also measured as a function of the radiation wavelength in the 911 μm spectral domain. Excellent agreement between the experimental results and finite-difference time-domain (FDTD) predictions was obtained.
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Call Number RPLAB @ gujma @ Serial 738
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Author Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E.
Title Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies Type Journal Article
Year 2001 Publication Infrared Physics & Technology Abbreviated Journal Infrared Physics & Technology
Volume (up) 42 Issue 1 Pages 41-47
Keywords NbN HEB mixers, anti-reflection coating
Abstract Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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ISSN 1350-4495 ISBN Medium
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Notes Approved no
Call Number Serial 1548
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Author Siemsen, K. J.; Bernard, J. E.; Madej, A. A.; Marmet, L.
Title Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz Type Journal Article
Year 2001 Publication Applied Physics B: Lasers and Optics Abbreviated Journal Appl. Phys. B: Lasers and Optics
Volume (up) 72 Issue Pages 567-573
Keywords HgCdTe detector
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Call Number Serial 462
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Author Shelkovnikov, A.; Grain, C.; Nguyen, C. T.; Butcher, R. J.; Amy-Klein, A.; Chardonnet, C.
Title 500-Hz two-photon Ramsey fringes with a SF6 beam: towards a new frequency standard in the 30-THz spectral region Type Journal Article
Year 2001 Publication Applied Physics B: Lasers and Optics Abbreviated Journal Appl. Phys. B: Lasers and Optics
Volume (up) 73 Issue Pages 93-98
Keywords THz applications
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Call Number Serial 485
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.
Volume (up) 73 Issue 1 Pages 44-47
Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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ISSN 0021-3640 ISBN Medium
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Notes Approved no
Call Number Serial 1752
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Author Gol’tsman, G. N.; Smirnov, K. V.
Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.
Volume (up) 74 Issue 9 Pages 474-479
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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ISSN 0021-3640 ISBN Medium
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Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no
Call Number Serial 1541
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Author Гольцман, Г. Н.; Смирнов, К. В.
Title По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Type Journal Article
Year 2001 Publication Письма в ЖЭТФ Abbreviated Journal Письма в ЖЭТФ
Volume (up) 74 Issue 9 Pages 532-538
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою.
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Notes Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” Approved no
Call Number Serial 1832
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Author Zwiller, Vale<cc><81>ry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, Sören; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Björk, Gunnar
Title Single quantum dots emit single photons at a time: Antibunching experiments Type Journal Article
Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (up) 78 Issue 17 Pages 2476
Keywords antibunching, quantum dot
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ISSN 0003-6951 ISBN Medium
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Notes Approved no
Call Number Serial 502
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Author Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M.
Title Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers Type Journal Article
Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (up) 79 Issue 15 Pages 2483-2485
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ISSN 0003-6951 ISBN Medium
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Call Number Serial 311
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Author Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V.
Title Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures Type Journal Article
Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal
Volume (up) 79 Issue Pages 2049-2051
Keywords HEB detector, FIR, far infrared
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Call Number RPLAB @ s @ heb_eph_interaction_Gershenzon Serial 315
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Author Jackson, B. D.; Baryshev, A. M.; de Lange, G.; Gao, J. R.; Shitov, S. V.; Iosad, N. N.; Klapwijk, T. M.
Title Low-noise 1 THz superconductor-insulator-superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit Type Journal Article
Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal
Volume (up) 79 Issue 3 Pages 436
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Call Number RPLAB @ s @ sis_Jackson_2001 Serial 314
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Author Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R.
Title Picosecond superconducting single-photon optical detector Type Journal Article
Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume (up) 79 Issue 6 Pages 705-707
Keywords NbN SSPD, SNSPD
Abstract We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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ISSN 0003-6951 ISBN Medium
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Notes Approved no
Call Number Serial 1543
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Author Semenov, A.; Goltsman, G.; Korneev, A.
Title Quantum detection by current carrying superconducting film Type Journal Article
Year 2001 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.
Volume (up) 351 Issue 4 Pages 349-356
Keywords quantum detection, phase slip centers, quasiparticle diffusion
Abstract We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism.
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ISSN 0921-4534 ISBN Medium
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Notes Approved no
Call Number Serial 507
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Author Chen, P. S.
Title Infrared properties of barium stars Type Journal Article
Year 2001 Publication Astron. Astrophys. Abbreviated Journal A&A
Volume (up) 372 Issue 1 Pages 245-248
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ISSN 0004-6361 ISBN Medium
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Call Number RPLAB @ s @ Serial 415
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Author Puscasu, Irina; Boreman, Glenn D.
Title Theoretical and experimental analysis of transmission and enchanced absorption of frequency selective surfaces in the infrared Type Conference Article
Year 2001 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume (up) 4293 Issue Pages 185-190
Keywords optical antennas
Abstract A comparative study between theory and experiment is presented for transmission through lossy frequency selective surfaces (FSSs) on silicon in the 2 – 15 micrometer range. Important parameters controlling the resonance shape and location are identified: dipole length, spacing, impedance, and dielectric surroundings. Their separate influence is exhibited. The primary resonance mechanism of FSSs is the resonance of the individual metallic patches. There is no discernable resonance arising from a feed-coupled configuration. The real part of the element's impedance controls the minimum value of transmission, while scarcely affecting its location. Varying the imaginary part shifts the location of resonance, while only slightly changing the minimum value of transmission. With such fine-tuning, it is possible to make a good fit between theory and experiment near the dipole resonance on any sample. A fixed choice of impedance can provide a reasonable fit to all samples fabricated under the same conditions. The dielectric surroundings change the resonance wavelength of the FSS compared to its value in air. The presence of FSS on the substrate increases the absorptivity/emissivity of the surface in a resonant way. Such enhancement is shown for dipole and cross arrays at several wavelengths.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 753
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