| Records |
| Author |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Electron-phonon interaction in ultrathin Nb films |
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Journal Article |
| Year |
1990 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume  |
70 |
Issue |
3 |
Pages |
505-511 |
| Keywords |
Nb films |
| Abstract |
A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
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241 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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Journal Article |
| Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
71 |
Issue |
1 |
Pages |
31-34 |
| Keywords |
2DEG, GaAs/AlGaAs heterostructures |
| Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
| Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
Type |
Journal Article |
| Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
| Volume |
73 |
Issue |
1 |
Pages |
44-47 |
| Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
| Abstract |
The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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1752 |
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Gol’tsman, G. N.; Smirnov, K. V. |
| Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
| Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
| Volume |
74 |
Issue |
9 |
Pages |
474-479 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
| Title |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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Journal Article |
| Year |
1995 |
Publication |
JETP |
Abbreviated Journal |
JETP |
| Volume |
80 |
Issue |
5 |
Pages |
960-964 |
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The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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RPLAB @ phisix @ |
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989 |
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