toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Baselmans, J. J. A.; Hajenius, M.; Gao, J.; de Korte, P.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. url  doi
openurl 
  Title Doubling of sensitivity and bandwidth in phonon-cooled hot-electron bolometer mixers Type Conference Article
  Year 2004 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (up) 5498 Issue Pages 168-176  
  Keywords Hot electron bolometers, bandwidth, noise temperature, experimental  
  Abstract NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN – contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 – 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Zmuidzinas, J.; Holland, W.S.; Withington, S.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Millimeter and Submillimeter Detectors for Astronomy II  
  Notes Approved no  
  Call Number Serial 1744  
Permanent link to this record
 

 
Author Genack, Azriel Z.; Kopp, Victor I.; Churikov, Victor M.; Singer, Jonathan; Chao, Norman; Neugroschl, Daniel A. openurl 
  Title Chiral fiber Bragg gratings Type Conference Article
  Year 2004 Publication Proceedings of the SPIE Abbreviated Journal Proc. SPIE  
  Volume (up) 5508 Issue Pages 57-64  
  Keywords optical fiber gratings, chiral fiber gratings, chiral gratings, from chiralphotonics  
  Abstract We have produced chiral fiber Bragg gratings with double-helix symmetry and measured the polarization and wavelength selective transmission properties of these structures. These gratings interact only with circularly polarized light with the same handedness as the grating twist and freely transmit light of the orthogonal polarization. The optical characteristics of chiral fibers are compared to those of planar cholesteric structures. The resonant standing wave at the band edge or at a defect state within the band gap, as well as the evanescent wave within the band gap is comprised of two counterpropagating components of equal amplitude. The electric field vector of such a circularly polarized standing wave does not rotate in time; rather it is linearly polarized in any given plane. The standing wave may be described in terms of the sense of circular polarization of the two counterpropagating components. The wavelength dependence of the angle q between the linearly polarized electromagnetic field and the extraordinary axis, which is constant throughout a long structure, is obtained in a simple calculation. The results are in good agreement with scattering matrix calculations. Resonant chiral gratings are demonstrated for microwave radiation whereas chiral gratings with pitch exceeding the wavelength are demonstrated at optical wavelengths in single-mode glass fibers. The different functionalities of these fibers are discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 854  
Permanent link to this record
 

 
Author Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. doi  openurl
  Title NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers Type Conference Article
  Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (up) 5727 Issue Pages 95-106  
  Keywords NbN HEB mixers  
  Abstract We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Terahertz and Gigahertz Electronics and Photonics IV  
  Notes Approved no  
  Call Number Serial 378  
Permanent link to this record
 

 
Author Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R. url  doi
openurl 
  Title Advanced nanostructured optical NbN single-photon detector operated at 2.0 K Type Conference Article
  Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (up) 5732 Issue Pages 520-529  
  Keywords NbN SSPD, SNSPD  
  Abstract We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as  30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was  20% and decreased exponentially with the wavelength reaching  0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Razeghi, M.; Brown, G.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Quantum Sensing and Nanophotonic Devices II  
  Notes Approved no  
  Call Number Serial 1478  
Permanent link to this record
 

 
Author Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Slepneva, S.; Seleznev, V.; Chulkova, G.; Okunev, O.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Slysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R. url  doi
openurl 
  Title Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation Type Conference Article
  Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (up) 5957 Issue Pages 59570A (1 to 9)  
  Keywords SSPD, SNSPD, single-photon detectors, superconductors, superconducting  
  Abstract We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Rogalski, A.; Dereniak, E.L.; Sizov, F.F.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Infrared Photoelectronics  
  Notes Approved no  
  Call Number Serial 1458  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: