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Author | Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. | ||||
Title | Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies | Type | Journal Article | ||
Year | 1999 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 9 | Issue | 2 | Pages | 3757-3760 |
Keywords | NbN HEB mixers | ||||
Abstract | The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1569 | |||
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Author | Семенов, А. В.; Девятов, И. А.; Рябчун, С. А.; Масленников, С. Н.; Масленникова, А. С.; Ларионов, П. А.; Воронов, Б. М.; Чулкова, Г. М. | ||||
Title | Поглощение терагерцового электромагнитного излучения в “грязной” сверхпроводниковой пленке при произвольном виде спектральных функций | Type | Journal Article | ||
Year | 2011 | Publication | Ж. Радиоэлектрон. | Abbreviated Journal | |
Volume | 10 | Issue | Pages | 7 | |
Keywords | terahertz electromagnetic radiation; superconductors; detectors of terahertz range | ||||
Abstract | A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. В технике Келдыша рассмотрена задача о поглощении мощности высокочастотного электромагнитного поля в сверхпроводнике, удовлетворяющем условию грязного предела. Получено выражение для члена источника в кинетическом уравнении для функции распределения квазичастиц, справедливое при произвольном виде спектральных функций. Этот результат имеет значение для развития последовательной микроскопической теории сверхпроводниковых детекторов излучения терагерцового диапазона, в частности, перспективных детекторов на кинетической индуктивности смещённой током сверхпроводниковой полоски и джозефсоновской индуктивности туннельного контакта. |
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Notes | Duplicated as 1117 | Approved | no | ||
Call Number | RPLAB @ gujma @ | Serial | 713 | ||
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Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
Volume | 10 | Issue | 5 | Pages | 1-12 |
Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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Language | English | Summary Language | Original Title | ||
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ISSN | 2079-4991 | ISBN | Medium | ||
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Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
Call Number | Serial | 1151 | |||
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Author | Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P. | ||||
Title | Fully integrated quantum photonic circuit with an electrically driven light source | Type | Journal Article | ||
Year | 2016 | Publication | Nat. Photon. | Abbreviated Journal | Nat. Photon. |
Volume | 10 | Issue | 11 | Pages | 727-732 |
Keywords | Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector | ||||
Abstract | Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices. | ||||
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Call Number | RPLAB @ kovalyuk @ | Serial | 1105 | ||
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Author | Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. | ||||
Title | Thermal properties of NbN single-photon detectors | Type | Journal Article | ||
Year | 2018 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
Volume | 10 | Issue | 6 | Pages | 064063 (1 to 8) |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. | ||||
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ISSN | 2331-7019 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1226 | |||
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Author | Iomdina, E. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A.; Goltsman, G. N. | ||||
Title | Terahertz scanning for evaluation of corneal and scleral hydration | Type | Journal Article | ||
Year | 2018 | Publication | Sovremennye tehnologii v medicine | Abbreviated Journal | STM |
Volume | 10 | Issue | 4 | Pages | 143-149 |
Keywords | BWO; Golay cell; medicine; cornea; sclera; THz radiation; corneal hydration; backward-wave oscillator; avalanche transit-time diode; IMPATT diode | ||||
Abstract | The aim of the investigation was to study the prospects of using continuous THz scanning of the cornea and the sclera to determine water concentration in these tissues and on the basis of the obtained data to develop the experimental installation for monitoring corneal and scleral hydration degree.Materials and Methods. To evaluate corneal and scleral transmittance and reflectance spectra in the THz range, the developed experimental installations were used to study 3 rabbit corneas and 3 scleras, 2 whole rabbit eyes, and 3 human scleras. Besides, two rabbit eyes were studied in vivo prior to keratorefractive surgery as well as 10 and 21 days following the surgery (LASIK).Results. There have been created novel experimental installations enabling in vitro evaluation of frequency dependence of corneal and scleral transmittance coefficients and reflectance coefficients on water percentage in the THz range. Decrease in corneal water content by 1% was found to lead to reliably established decrease in the reflected signal by 13%. The reflectance spectrum of the whole rabbit eye was measured in the range of 0.13–0.32 THz. The study revealed the differences between the indices of rabbit cornea and sclera, as well as rabbit and human sclera. There was developed a laboratory model of the installation for in vivo evaluation of corneal and scleral hydration using THz radiation.Conclusion. The preliminary findings show that the proposed technique based on the use of continuous THz radiation can be employed to create a device for noninvasive control of corneal and scleral hydration. | ||||
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Call Number | Serial | 1315 | |||
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Author | Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
Title | Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions | Type | Journal Article | ||
Year | 1976 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume | 10 | Issue | Pages | 1379-1383 | |
Keywords | Ge, cyclotron resonance, charged impurities, | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1772 | |||
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Author | Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. | ||||
Title | Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation | Type | Journal Article | ||
Year | 2020 | Publication | Sci. Rep. | Abbreviated Journal | Sci. Rep. |
Volume | 10 | Issue | 1 | Pages | 16819 |
Keywords | VN HEB | ||||
Abstract | The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. | ||||
Address | National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia | ||||
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ISSN | 2045-2322 | ISBN | Medium | ||
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Notes | PMID:33033360; PMCID:PMC7546726 | Approved | no | ||
Call Number | Serial | 1797 | |||
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Author | Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. | ||||
Title | NbN hot electron bolometric mixers for terahertz receivers | Type | Journal Article | ||
Year | 2001 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 11 | Issue | 1 | Pages | 962-965 |
Keywords | NbN HEB mixers | ||||
Abstract | Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. | ||||
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Call Number | Serial | 312 | |||
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Author | Семенов, А. В.; Девятов, И. А.; Третьяков, И. В.; Лобанов, Ю. В.; Ожегов, Р. В.; Петренко, Д. В.; Селиверстов, С. В.; Финкель, М. И. | ||||
Title | Вывод уравнения типа уравнения гинзбурга-ландау для нанопроволоки вблизи критического магнитного поля | Type | Journal Article | ||
Year | 2011 | Publication | Журнал радиоэлектроники | Abbreviated Journal | Ж. радиоэлектроники |
Volume | 11 | Issue | Pages | 4 | |
Keywords | superconductivity; nanowire; Ginzburg-Landau equation | ||||
Abstract | Nonlinear Ginzburg-Landau equation for dirty supercondicting 1D wire is derived in the limit of high magnetic field. В пределе больших магнитных полей выведено нелинейное уравнение Гинзбурга-Ландау, описывающее состояние одномерной «грязной» нанопроволоки. |
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Notes | Approved | no | |||
Call Number | RPLAB @ gujma @ | Serial | 714 | ||
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