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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
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Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Keywords |
Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Author |
Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Conference Article |
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Year |
1998 |
Publication |
Proc. 28th European Microwave Conf. |
Abbreviated Journal |
Proc. 28th European Microwave Conf. |
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1 |
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Pages |
294-299 |
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Keywords |
NbN HEB mixers |
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Abstract |
In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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Author |
Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
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Conference Article |
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Year |
1997 |
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Proc. 27th Eur. Microwave Conf. |
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2 |
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972-977 |
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Keywords |
HEB mixer, fabrication process |
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Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Jerusalem, Israel |
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IEEE |
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27th Eur. Microwave Conf. |
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1075 |
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Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
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Title |
Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements |
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Conference Article |
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Year |
1993 |
Publication |
Proc. 1st European Conf. on Appl. Supercond. |
Abbreviated Journal |
Proc. 1st European Conf. on Appl. Supercond. |
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2 |
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1443-1446 |
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Keywords |
YBCO HTS detectors |
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Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory. |
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Freyhardt, H. C. |
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3-88355-197-X |
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1st European conference on applied superconductivity |
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1661 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
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Title |
Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
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Journal Article |
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Year |
1990 |
Publication |
Sov. Supercond. |
Abbreviated Journal |
Sov. Supercond. |
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Volume |
3 |
Issue |
10 |
Pages |
1582-1597 |
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Keywords |
HEB mixers |
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240 |
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