Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Sergeev, A. V., Semenov, A. D., Kouminov, P., Trifonov, V., Goghidze, I. G., Karasik, B. S., et al. (1994). Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation. Phys. Rev. B Condens. Matter., 49(13), 9091–9096.
Abstract: The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Kurochkin, V. L., Zverev, A. V., Kurochkin, Y. V., Ryabtsev, I. I., Neizvestnyi, I. G., Ozhegov, R. V., et al. (2015). Long-distance fiber-optic quantum key distribution using superconducting detectors. In Proc. Optoelectron. Instrum. (Vol. 51, pp. 548–552).
Abstract: This paper presents the results of experimental studies on quantum key distribution in optical fiber using superconducting detectors. Key generation was obtained on an experimental setup based on a self-compensation optical circuit with an optical fiber length of 101.1 km. It was first shown that photon polarization encoding can be used for quantum key distribution in optical fiber over a distance in excess of 300 km.
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Tikhonov, V. V., Polyakova, O. N., Gol’tsman, G. N., Dzardanov, A. L., & Boyarskiy, D. A. (2008). Determination of dielectric properties of ore minerals in the microwave band. Radiophys. Quant. Electron., 51(12), 966–974.
Abstract: We consider a method for determining the complex dielectric permittivity of ore and nonmetal minerals in the microwave band of electromagnetic radiation. The results of measuring the reflectivity and transmittivity of chalcopyrite, magnetite, sphalerite, and labradorite samples in the frequency range 77–300 GHz are presented. A method for calculation of the complex dielectric permittivity of minerals on the basis of the obtained experimental data is proposed. The approximation formulas for calculation of the complex dielectric permittivity of the studied minerals are given.
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Ozhegov, R. V., Okunev, O. V., Gol’tsman, G. N., Filippenko, L. V., & Koshelets, V. P. (2009). Noise equivalent temperature difference of a superconducting integrated terahertz receiver. J. Commun. Technol. Electron., 54(6), 716–720.
Abstract: The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased.
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