Edlmayr, V., Harzer, T. P., Hoffmann, R., Kiener, D., Scheu, C., & Mitterer, C. (2011). Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings. J. Vac. Sci. Technol. A, 29(4), 8.
Abstract: The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3.
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Lee, B. G., Assefa, S., Green, W. M. J., Min Yang, Schow, C. L., Jahnes, C. V., et al. (2011). Multichannel high-bandwidth coupling of ultradense silicon photonic waveguide array to standard-pitch fiber array. J. Lightwave Technol., 29(4), 475–482.
Abstract: A multichannel tapered coupler interfacing standard 250-μm-pitch low-numerical-aperture (NA) polarization-maintaining fiber arrays with ultradense 20- μm-pitch high-NA silicon waveguides is designed and fabricated. The coupler is based on an array of 12 dual-core glass waveguides on 250-μ m pitch that are tapered to a 20- μm pitch, simultaneously providing both pitch and spot-size conversion. At the wide end, the inner core matches the NA and mode profile of standard single-mode fiber. When drawn and tapered, the inner core “vanishes†and the outer core, surrounded by the clad, matches the NA and mode profile of the on-chip photonic waveguide. Ultradense high-efficiency coupling to an array of Si photonic waveguides is demonstrated using a 12-channel polarization-maintaining-fiber pigtailed tapered coupler. Coupling to Si waveguides is facilitated using SiON spot-size converters integrated into the Si photonic IC to provide 2-3-μm mode field diameters compatible with the tapered coupler. The tapered coupler achieves <; 1 dB coupling losses to photonic waveguides. Furthermore, eight-channel coupling is shown with less than -35 dB crosstalk between channels. Finally, a 640-Gb/s wavelength-division-multiplexing signal is coupled into four waveguides occupying 80 μm of chip edge, providing 160-Gb/s per-channel bandwidths.
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Манова, Н. Н., Корнеева, Ю. П., Корнеев, А. А., Слыш, В., Воронов, Б. М., & Гольцман, Г. Н. (2011). Сверхпроводниковый NbN однофотонный детектор, интегрированный с четвертьволновым резонатором. ПЖТФ, 37(10), 7.
Abstract: Исследована спектральная зависимость квантовой эффективности сверхпроводниковых NbN однофотонных детекторов, интегрированных с оптическими четвертьволновыми резонаторами с использованием диэлектриков Si3N4, SiO2, SiO.
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Manova, N. N., Korneeva, Y. P., Korneev, A. A., Slysz, W., Voronov, B. M., & Gol'tsman, G. N. (2011). Superconducting NbN single-photon detector integrated with quarter-wave resonator. Tech. Phys. Lett., 37(5), 469–471.
Abstract: The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied.
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Rasulova, G. K., Brunkov, P. N., Pentin, I. V., Kovalyuk, V. V., Gorshkov, K. N., Kazakov, A. Y., et al. (2011). Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices. Tech. Phys., 56(6), 826–830.
Abstract: The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
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