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Author Sprengers, J. P.; Gaggero, A.; Sahin, D.; Jahanmirinejad, S.; Frucci, G.; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A.
Title Waveguide superconducting single-photon detectors for integrated quantum photonic circuits Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 99 Issue 18 Pages 181110(1-3)
Keywords optical waveguides, waveguide SSPD
Abstract The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (~0%) at telecom wavelengths, high timing accuracy (~0 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators.
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Call Number Serial 847
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Author Baek, Burm; Lita, Adriana E.; Verma, Varun; Nam, Sae Woo
Title Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 98 Issue 25 Pages 3
Keywords SNSPD
Abstract We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Call Number RPLAB @ gujma @ Serial 665
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Author Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K.
Title Electrothermal simulation of superconducting nanowire avalanche photodetectors Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 98 Issue 9 Pages 3
Keywords SNAP
Abstract We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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Call Number RPLAB @ gujma @ Serial 658
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Author Terai, Hirotaka; Miki, Shigehito; Yamashita, Taro; Makise, Kazumasa; Wang, Zhen
Title Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 97 Issue 11 Pages 3
Keywords SSPD
Abstract A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Call Number RPLAB @ gujma @ Serial 654
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Author Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A.
Title Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 97 Issue 15 Pages 3
Keywords SSPD
Abstract We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Call Number RPLAB @ gujma @ Serial 681
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Author Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio
Title Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 97 Issue 2 Pages 3
Keywords Annealing
Abstract We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Notes Annealing Approved no
Call Number RPLAB @ gujma @ Serial 691
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Author Santavicca,D.F.; Reulet,B.; Karasik,B.S.; Pereverzev,S.V.; Olaya, D.; Gershenson, M.E.; Frunzio, L.; Prober, D.E.
Title Energy resolution of terahertz single-photon-sensitive bolometric detectors Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 96 Issue 8 Pages 083505 - 083505-3
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Abstract We report measurements of the energy resolution of ultrasensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 THz, near the predicted value due to intrinsic thermal fluctuation noise.
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Call Number RPLAB @ akorneev @ Serial 601
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Author Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M.
Title Quantum noise in a terahertz hot electron bolometer mixer Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 96 Issue 11 Pages 111113-(1-3)
Keywords HEB mixer, quantum limit, quantum noise, vacuum box, THz, Terahertz
Abstract We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value.
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Call Number Serial 624
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Author Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V.
Title Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 96 Issue 22 Pages 3
Keywords SNSPD
Abstract Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Call Number RPLAB @ gujma @ Serial 655
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Author Sekine, Norihiko; Hosako, Iwao
Title Intensity modulation of terahertz quantum cascade lasers under external light injection Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 95 Issue Pages 201106(1-3)
Keywords QCL modulation, THz, terahertz
Abstract We investigated the light-current characteristics of terahertz (THz) quantum cascade lasers under external light injection, which excites interband transitions in the active materials. It was found that the amount of reduction in the THz power was constant for all injection currents above threshold, and the dependence of the reduction amount on the wavelength of the external light was observed to show a resonancelike feature. The dominant intensity modulation mechanism was found to be the loss change caused by interband transitions in the active region. Further, the effective coupling efficiency plays an important role in the intensity modulation.
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Call Number Serial 630
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