Records |
Author |
Moshkova, M. A.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
Title |
High-efficiency multi-element superconducting single-photon detector |
Type |
Conference Article |
Year |
2021 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
11771 |
Issue |
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Pages |
2-8 |
Keywords |
PNR SSPD, large active area, detection efficiency |
Abstract |
We present the result of the creation and investigation of the multi-element superconducting single photon detectors, which can recognize the number of photons (up to six) in a short pulse of the radiation at telecommunication wavelengths range. The best receivers coupled with single-mode fiber have the system quantum efficiency of ⁓85%. The receivers have a 100 ps time resolution and a few nanoseconds dead time that allows them to operate at megahertz counting rate. Implementation of the multi-element architecture for creation of the superconducting single photon detectors with increased sensitive area allows to create the high efficiency receivers coupled with multi-mode fibers and with preserving of the all advantages of superconducting photon counters. |
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Publisher |
SPIE |
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Editor |
Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A. |
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Conference |
Quantum Optics and Photon Counting |
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Serial |
1795 |
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Author |
Schroeder, E.; Mauskopf, P.; Pilyavsky, G.; Sinclair, A.; Smith, N.; Bryan, S.; Mani, H.; Morozov, D.; Berggren, K.; Zhu, D.; Smirnov, K.; Vakhtomin, Y. |
Title |
On the measurement of intensity correlations from laboratory and astronomical sources with SPADs and SNSPDs |
Type |
Conference Article |
Year |
2016 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
9907 |
Issue |
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Pages |
99070P (1 to 13) |
Keywords |
SPAD, NbN SSPD applications, SNSPD |
Abstract |
We describe the performance of detector modules containing silicon single photon avalanche photodiodes (SPADs) and superconducting nanowire single photon detectors (SNSPDs) to be used for intensity interferometry. The SPADs are mounted in fiber-coupled and free-space coupled packages. The SNSPDs are mounted in a small liquid helium cryostat coupled to single mode fiber optic cables which pass through a hermetic feed-through. The detectors are read out with microwave amplifiers and FPGA-based coincidence electronics. We present progress on measurements of intensity correlations from incoherent sources including gas-discharge lamps and stars with these detectors. From the measured laboratory performance of the correlation system, we estimate the sensitivity to intensity correlations from stars using commercial telescopes and larger existing research telescopes. |
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SPIE |
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Editor |
Malbet, F.; Creech-Eakman, M.J.; Tuthill, P.G. |
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Optical and Infrared Interferometry and Imaging V |
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Serial |
1809 |
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Author |
Cherednichenko, S.; Khosropanah, P.; Adam, A.; Merkel, H. F.; Kollberg, E. L.; Loudkov, D.; Gol'tsman, G. N.; Voronov, B. M.; Richter, H.; Huebers, H.-W. |
Title |
1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory |
Type |
Conference Article |
Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
4855 |
Issue |
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Pages |
361-370 |
Keywords |
NbN HEB mixers |
Abstract |
NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope. |
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SPIE |
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Editor |
Phillips, T.G.; Zmuidzinas, J. |
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Millimeter and Submillimeter Detectors for Astronomy |
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Serial |
1521 |
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Author |
Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. |
Title |
Developing of NbN films for superconducting microstrip single-photon detector |
Type |
Conference Article |
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1695 |
Issue |
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Pages |
012116 (1 to 5) |
Keywords |
NbN SSPD, SNSPD, NbN films |
Abstract |
We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. |
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Edition |
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ISSN |
1742-6588 |
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no |
Call Number |
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Serial |
1786 |
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Author |
Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
Title |
Influence of deposited material energy on superconducting properties of the WSi films |
Type |
Conference Article |
Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
Volume |
781 |
Issue |
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Pages |
012013 (1 to 6) |
Keywords |
WSi SSPD, SNSPD |
Abstract |
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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Edition |
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ISSN |
1757-899X |
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no |
Call Number |
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Serial |
1798 |
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