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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz |
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Conference Article |
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1998 |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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105-114 |
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NbN HEB mixers |
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1587 |
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Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer |
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Conference Article |
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2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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39-48 |
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NbN HEB mixers |
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We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens. |
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305 |
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Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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286-296 |
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NbN HEB mixers |
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San Diego, CA, USA |
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323 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Improved characteristics of NbN HEB mixers integrated with log-periodic antennas |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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200-207 |
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NbN HEB mixers |
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1574 |
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Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range |
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Conference Article |
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1998 |
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Proc. 6-th Int. Conf. Terahertz Electron. |
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Proc. 6-th Int. Conf. Terahertz Electron. |
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18-20 |
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NbN HEB mixers |
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We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz. |
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Leeds, UK |
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IEEE |
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0-7803-4903-2 |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1581 |
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Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz |
Type |
Conference Article |
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1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
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121-129 |
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NbN HEB mixers |
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We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz. |
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1588 |
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Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
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Title |
Electron-phonon scattering rate in impure NbC films |
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1998 |
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NASA/ADS |
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NASA/ADS |
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Y35.08 |
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NbC films |
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The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA |
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1591 |
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Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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47-50 |
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NbN HEB mixers |
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Charlottesville, Virginia |
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1601 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
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Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
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163-166 |
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S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M. |
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Title |
NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version |
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Conference Article |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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258-271 |
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NbN HEB mixers |
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We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups. |
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1605 |
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Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
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Title |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
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337-348 |
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YBCO HTS HEB mixers |
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Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range. |
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1615 |
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Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M. |
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Title |
Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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584-600 |
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NbN HEB mixers |
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We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range. |
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Gol'tsman, G. N.; Karasik, B. S.; Svechnikov, S. I.; Gershenzon, E. M.; Ekström, H.; Kollberg E. |
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Title |
Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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268 |
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NbN HEB mixers, noise temperature |
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The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity. |
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1627 |
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Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength |
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Conference Article |
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Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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284-293 |
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NbN HEB mixers, detectors |
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We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future. |
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1629 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation |
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Conference Article |
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1994 |
Publication |
Council on Low-temp. Phys. |
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Council on Low-temp. Phys. |
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82-83 |
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YBCO HTS HEB |
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Dubna |
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Russian |
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Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994 |
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Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности |
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Gershenzon, E. M.; Gol'tsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Hot electron superconductive mixers |
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Conference Article |
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1993 |
Publication |
Proc. 4th Int. Symp. Space Terahertz Technol. |
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Proc. 4th Int. Symp. Space Terahertz Technol. |
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618-622 |
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HEB mixers |
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1656 |
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Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Antenna – coupled superconducting electron-heating bolometer |
Type |
Conference Article |
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Year |
1993 |
Publication |
Proc. 4th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 4th Int. Symp. Space Terahertz Technol. |
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623-628 |
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HEB |
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We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2. |
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1657 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Picosecond response of YBaCuO films to electromagnetic radiation |
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Conference Article |
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1990 |
Publication |
Proc. European Conf. High-Tc Thin Films and Single Crystals |
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Proc. European Conf. High-Tc Thin Films and Single Crystals |
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457-462 |
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YBCO HTS detectors |
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Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized. |
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Gorzkowski, W.; Gutowski, M.; Reich, A.; Szymczak, H. |
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European Conference , Ustroń, Poland , 30 Sept – 4 Oct 1989 |
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1695 |
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
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1976 |
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Physics of Semiconductors |
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Physics of Semiconductors |
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631-634 |
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Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Conference Article |
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1998 |
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Proc. 28th European Microwave Conf. |
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Proc. 28th European Microwave Conf. |
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294-299 |
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NbN HEB mixers |
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In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
![find book details (via ISBN) isbn](img/isbn.gif)
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Title |
Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements |
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1993 |
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Proc. 1st European Conf. on Appl. Supercond. |
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Proc. 1st European Conf. on Appl. Supercond. |
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2 |
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1443-1446 |
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YBCO HTS detectors |
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Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory. |
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Freyhardt, H. C. |
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3-88355-197-X |
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1st European conference on applied superconductivity |
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1661 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
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Journal Article |
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1990 |
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Sov. Supercond. |
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Sov. Supercond. |
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3 |
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10 |
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1582-1597 |
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HEB mixers |
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240 |
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Nebosis, R. S.; Heusinger, M. A.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Ultrafast photoresponse of a structured YBa2Cu3O7-δ thin film to ultrashort FIR laser pulses |
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Journal Article |
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1993 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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3 |
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1 |
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2160-2162 |
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YBCO HTS detectors |
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The authors have investigated the photoinduced voltage response of a current-carrying structured YBa2Cu3O7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment. |
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1658 |
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Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Aksaev, E. E.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Non-equilibrium quasiparticle response to radiation and bolometric effect in YBaCuO films |
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Journal Article |
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1993 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
3 |
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1 |
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2132-2135 |
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YBCO HTS HEB detectors |
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The voltage photoresponse of structured current biased YBCO films on different substrates to 20-ps laser pulses of 0.63- mu m and 1.54- mu m wavelengths and to continuously modulated radiation of 2-mm wavelength is measured to temperatures around Tc. Fast picosecond decay of the response to pulsed radiation is followed by slow exponential relaxation with a nanosecond characteristic time depending on the substrate material and film dimensions. The slow component does not depend on wavelength and is attributed to the bolometric effect, while the magnitude of the fast component associated with nonequilibrium response rises with wavelength. More than an order-of-magnitude increase of the nonequilibrium response is seen from near-infrared to millimeter-wave range. This dependence plausibly reflects the low efficiency of multiplication of photoexcited electrons in YBaCuO compared to conventional superconductors. |
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1558-2515 |
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1659 |
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Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Low energy excitation in La2CuO4 |
Type |
Journal Article |
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Year |
1990 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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3 |
Issue |
5 |
Pages |
832-837 |
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Keywords |
metal-dielectric-La2CuO4, monocrystals |
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Abstract |
Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed. |
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1688 |
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Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light |
Type |
Journal Article |
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Year |
1991 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
4 |
Issue |
9 |
Pages |
453-456 |
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Keywords |
NbN HEB detectors |
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Abstract |
The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature. |
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0953-2048 |
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242 |
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Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
NbN hot electron superconducting mixers for 100 GHz operation |
Type |
Journal Article |
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Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
5 |
Issue |
2 |
Pages |
3065-3068 |
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Keywords |
NbN HEB mixers |
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Abstract |
NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K. |
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1051-8223 |
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About LO power required |
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255 |
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Author |
Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
High speed current switching of homogeneous YBaCuO film between superconducting and resistive states |
Type |
Journal Article |
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Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
5 |
Issue |
2 |
Pages |
3042-3045 |
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Keywords |
YBCO HTS HEB switches |
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Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively. |
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1051-8223 |
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Serial |
1620 |
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Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Hot electron quasioptical NbN superconducting mixer |
Type |
Journal Article |
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Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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5 |
Issue |
2 |
Pages |
2232-2235 |
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Keywords |
NbN HEB mixers |
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Abstract |
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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1622 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light |
Type |
Journal Article |
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Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
Issue |
5 |
Pages |
955-960 |
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NbN HEB detectors |
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Abstract |
Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect. |
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0131-5366 |
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1670 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials |
Type |
Journal Article |
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Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
5 |
Issue |
6 |
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1129-1140 |
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IR HEB detectors |
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Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response. |
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Russian |
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0131-5366 |
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1673 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation |
Type |
Journal Article |
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Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
Issue |
12 |
Pages |
2386-2402 |
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YBCO HTS switches |
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A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed. |
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0131-5366 |
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1674 |
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Gershenzon, E. M.; Goltsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Zeeman effect in excited-states of donors in germanium |
Type |
Journal Article |
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Year |
1972 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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6 |
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3 |
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509 |
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Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Gol’tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
Type |
Journal Article |
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Year |
1999 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
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6 |
Issue |
10-12 |
Pages |
649-655 |
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NbN HEB mixers |
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The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field. |
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0964-1807 |
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1564 |
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Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
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Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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6 |
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362-363 |
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Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer |
Type |
Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
2 |
Pages |
3556-3559 |
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Keywords |
YBCO HTS HEB mixers |
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Abstract |
We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources. |
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1051-8223 |
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1592 |
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Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
Type |
Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
2 |
Pages |
3572-3575 |
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Keywords |
NbN HEB mixers |
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Abstract |
The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation. |
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1051-8223 |
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1594 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
Type |
Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
2 |
Pages |
3548-3551 |
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Keywords |
NbN HEB mixers |
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Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1051-8223 |
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no |
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1595 |
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Author |
Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Fast NbN superconducting switch controlled by optical radiation |
Type |
Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
2 |
Pages |
3734-3737 |
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Keywords |
NbN superconducting switch |
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Abstract |
The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. |
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1051-8223 |
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1596 |
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Author |
Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Superconductive properties of ultrathin NbN films on different substrates |
Type |
Journal Article |
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Year |
1994 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
6 |
Pages |
1097-1102 |
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NbN films |
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Abstract |
A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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Russian |
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0131-5366 |
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Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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no |
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1631 |
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Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
Type |
Journal Article |
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Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
4 |
Pages |
751-755 |
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Keywords |
YBCO HTS detector, nonequilibrium response |
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Abstract |
The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions. |
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0896-1107 |
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no |
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Serial |
1636 |
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Author |
Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
A fast infrared detector based on patterned YBCO thin film |
Type |
Journal Article |
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Year |
1994 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
7 |
Issue |
5 |
Pages |
321-323 |
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Keywords |
YBCO HTS detector |
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Abstract |
Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. |
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0953-2048 |
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1646 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
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Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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7 |
Issue |
10 |
Pages |
1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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no |
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1733 |
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Author |
Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
Type |
Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
9 |
Issue |
4 |
Pages |
242-245 |
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NbN HEB mixers |
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1069-1227 |
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1550 |
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Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers |
Type |
Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
9 |
Issue |
3 |
Pages |
205-210 |
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Keywords |
NbN HEB mixers |
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1069-1227 |
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no |
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Call Number |
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Serial |
1551 |
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Author |
Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz |
Type |
Journal Article |
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Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
9 |
Issue |
2 |
Pages |
4217-4220 |
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Keywords |
NbN HEB mixers |
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Abstract |
NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region. |
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1051-8223 |
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no |
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Serial |
1568 |
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Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
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Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
10 |
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Pages |
1379-1383 |
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Ge, cyclotron resonance, charged impurities, |
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no |
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1772 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
Type |
Journal Article |
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Year |
1978 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
11 |
Issue |
12 |
Pages |
1395-1397 |
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Keywords |
InSb, spectrum of donors, strong magnetic field |
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no |
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Call Number |
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1725 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Effect of a high magnetic field on the spectrum of donors in InSb |
Type |
Journal Article |
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Year |
1977 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
11 |
Issue |
12 |
Pages |
2373-2375 |
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Keywords |
InSb, energy spectrum, donors, high magnetic field |
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Russian |
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Notes |
Воздействие сильного магнитного поля на спектр доноров в InSb |
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no |
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Call Number |
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Serial |
1729 |
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Permanent link to this record |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state |
Type |
Journal Article |
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Year |
1988 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
14 |
Issue |
7 |
Pages |
414-420 |
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Keywords |
HEB |
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Notes |
Duplicated as 1697 |
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no |
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Call Number |
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Serial |
236 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
Type |
Journal Article |
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Year |
1988 |
Publication |
Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
14 |
Issue |
7 |
Pages |
753-763 |
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Keywords |
Nb HEB |
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Abstract |
An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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no |
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Serial |
1697 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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Notes |
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no |
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Call Number |
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Serial |
1739 |
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Permanent link to this record |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
14 |
Issue |
2 |
Pages |
63-65 |
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Keywords |
Ge, donors, excited states |
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Approved |
no |
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Call Number |
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Serial |
1740 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
Type |
Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
14 |
Issue |
6 |
Pages |
241 |
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Keywords |
Ge, gamma irradiation, defects, impurities |
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no |
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Call Number |
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Serial |
1742 |
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Author |
Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Prospects for using high-temperature superconductors to create electron bolometers |
Type |
Journal Article |
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Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
15 |
Issue |
14 |
Pages |
88-93 |
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Keywords |
HTS HEB |
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Russian |
Summary Language |
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ISSN |
0320-0116 |
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Notes |
Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров |
Approved |
no |
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Call Number |
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Serial |
1693 |
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Permanent link to this record |
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Author |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Fast-response superconducting electron bolometer |
Type |
Journal Article |
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Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
15 |
Issue |
3 |
Pages |
88-92 |
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Keywords |
Nb HEB |
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Abstract |
The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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Russian |
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no |
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Call Number |
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Serial |
1694 |
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Permanent link to this record |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
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Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
16 |
Issue |
4 |
Pages |
161-162 |
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Keywords |
Ge, energy spectrum, free excitons |
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no |
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Call Number |
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Serial |
1736 |
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Permanent link to this record |
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Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Germanium hot-electron narrow-band detector |
Type |
Journal Article |
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Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
16 |
Issue |
8 |
Pages |
1346 |
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Keywords |
Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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no |
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Call Number |
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Serial |
1741 |
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Permanent link to this record |
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Author |
Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Quasioptical superconducting hot electron bolometer for submillmeter waves |
Type |
Journal Article |
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Year |
1996 |
Publication |
Int. J. of Infrared and Millimeter Waves |
Abbreviated Journal |
Int. J. of Infrared and Millimeter Waves |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
17 |
Issue |
2 |
Pages |
317-331 |
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Keywords |
NbN HEB |
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Abstract |
We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated. |
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ISSN |
0195-9271 |
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no |
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Call Number |
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Serial |
1618 |
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Author |
Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Picosecond response on optical-range emission in thin YBaCuO films |
Type |
Journal Article |
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Year |
1991 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
17 |
Issue |
22 |
Pages |
6-10 |
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Keywords |
YBCO HTS detectors |
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Abstract |
Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. |
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Russian |
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no |
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Serial |
1684 |
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Author |
Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
Type |
Journal Article |
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Year |
1993 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
18 |
Issue |
2 |
Pages |
96-97 |
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Keywords |
YBCO HTS detectors |
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Abstract |
We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. |
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English |
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0146-9592 |
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Notes |
PMID:19802049 |
Approved |
no |
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Call Number |
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Serial |
1660 |
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Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
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Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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|
Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
18 |
Issue |
3 |
Pages |
93 |
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Keywords |
Ge, free excitons, energy spectrum |
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Abstract |
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no |
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Call Number |
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Serial |
1734 |
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Permanent link to this record |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
Type |
Journal Article |
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Year |
1978 |
Publication |
Sov. Phys. Solid State |
Abbreviated Journal |
Sov. Phys. Solid State |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
20 |
Issue |
4 |
Pages |
573-579 |
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Keywords |
p-Ge, free carriers, resonances |
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Abstract |
The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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1721 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
Type |
Journal Article |
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Year |
1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
22 |
Issue |
3 |
Pages |
540-543 |
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Keywords |
Ge, free holes, capture |
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Abstract |
Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
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Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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22 |
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4 |
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95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
Type |
Journal Article |
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Year |
1997 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
23 |
Issue |
6 |
Pages |
486-488 |
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NbN KID |
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A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K. |
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1063-7850 |
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1593 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
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Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
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23 |
Issue |
8 |
Pages |
843-846 |
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Ge, crystallography |
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Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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1692 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
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Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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24 |
Issue |
3 |
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125-128 |
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n-Ge, cyclotron-impurity resonance |
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1730 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Submillimeter backward wave tube spectrometer for measuring superconducting film transmission |
Type |
Journal Article |
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Year |
1983 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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26 |
Issue |
5 |
Pages |
134-137 |
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BWO spectroscopy, spectrometer, transmission |
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Abstract |
A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV |
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0032-8162 |
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Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок |
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1713 |
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Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Wide-band highspeed Nb and YBaCuO detectors |
Type |
Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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27 |
Issue |
2 |
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2836-2839 |
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YBCO, HTS, Nb detectors |
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The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 3*10/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 5*10/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation. |
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0018-9464 |
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239 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films |
Type |
Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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27 |
Issue |
2 |
Pages |
1317-1320 |
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YBCO, HTS, Nb HEB mixers |
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A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively. |
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1941-0069 |
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1681 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
Type |
Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
27 |
Issue |
2 |
Pages |
1321-1324 |
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YBCO HTS detectors |
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Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable. |
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1941-0069 |
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no |
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Call Number |
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Serial |
1679 |
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Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Ultrafast superconductive switch |
Type |
Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
27 |
Issue |
2 |
Pages |
2844-2846 |
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Keywords |
Nb superconducting switch |
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Abstract |
The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5*2*0.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample. |
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1941-0069 |
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1680 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Submillimeter backward-wave-tube spectrometer-relaxometer |
Type |
Journal Article |
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Year |
1987 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
30 |
Issue |
4 |
Pages |
131-137 |
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Keywords |
BWO, applications |
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Abstract |
A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops. |
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no |
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Call Number |
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Serial |
1699 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches |
Type |
Conference Article |
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Year |
1992 |
Publication |
Progress in High Temperature Superconductivity |
Abbreviated Journal |
Progress in High Temperature Superconductivity |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
32 |
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Pages |
190-195 |
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Keywords |
superconducting films, heating of electrons |
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International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991 |
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https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 |
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1666 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
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Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
33 |
Issue |
11 |
Pages |
574 |
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Keywords |
Ge, excitons, photoconductivity |
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no |
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Serial |
1718 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Limiting characteristic of fast superconducting bolometers |
Type |
Journal Article |
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Year |
1989 |
Publication |
Sov. Phys.-Tech. Phys. |
Abbreviated Journal |
Sov. Phys.-Tech. Phys. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
34 |
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Pages |
195-199 |
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HEB |
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Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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Notes |
О предельных характеристиках быстродействующих серхпроводниковых болометров |
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Serial |
237 |
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Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
Type |
Journal Article |
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Year |
1982 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
36 |
Issue |
7 |
Pages |
296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
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Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
37 |
Issue |
2 |
Pages |
299-304 |
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Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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no |
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1735 |
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Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
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Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
40 |
Issue |
2 |
Pages |
311-315 |
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Keywords |
Ge, cyclotron resonance |
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Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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no |
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Serial |
1768 |
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Author |
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
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Journal Article |
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Year |
1996 |
Publication |
J. of Communications Technology and Electronics |
Abbreviated Journal |
J. of Communications Technology and Electronics |
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41 |
Issue |
5 |
Pages |
408-414 |
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Keywords |
submillimeter waves, transmission |
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A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
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1064-2269 |
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Радиотехника и электроника 41, no. 4 (1996): 441-447 |
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no |
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Serial |
1611 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
Type |
Conference Article |
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Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
Pages |
1231-1234 |
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spectrum, semiconductors, admixtures, strong magnetic-field |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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no |
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blagosklonskaya1978effect |
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1724 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
Type |
Journal Article |
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Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
43 |
Issue |
1 |
Pages |
116-122 |
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Keywords |
Ge, free excitons |
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Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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no |
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1731 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
Type |
Journal Article |
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Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
45 |
Issue |
4 |
Pages |
769-776 |
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Keywords |
p-Ge, photoconductivity, energy spectrum, magnetic field |
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Abstract |
We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
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no |
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Serial |
1727 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
Type |
Journal Article |
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Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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45 |
Issue |
3 |
Pages |
555-565 |
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Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum |
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Abstract |
The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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no |
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Serial |
1728 |
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Author |
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
Type |
Conference Article |
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Year |
1996 |
Publication |
Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
46 |
Issue |
S2 |
Pages |
857-858 |
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Keywords |
NbC films |
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Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
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0011-4626 |
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no |
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Call Number |
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Serial |
1617 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
Type |
Journal Article |
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Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
46 |
Issue |
5 |
Pages |
237-238 |
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Keywords |
YBCO HTS detectors |
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Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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no |
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1703 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
Type |
Journal Article |
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Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
46 |
Issue |
6 |
Pages |
285-287 |
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YBCO HTS HEB |
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Abstract |
For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
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1706 |
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Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
Type |
Conference Article |
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Year |
1996 |
Publication |
Czech J. Phys. |
Abbreviated Journal |
Czech J. Phys. |
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46 |
Issue |
S5 |
Pages |
2489-2490 |
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Al, Be, Nb films |
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The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). |
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0011-4626 |
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1767 |
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Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers |
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Journal Article |
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Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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47 |
Issue |
12 |
Pages |
2519-2527 |
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NbN HEB mixers |
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New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems. |
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1557-9670 |
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1560 |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Title |
Character of submillimeter photoconductivity in n-lnSb |
Type |
Journal Article |
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Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
49 |
Issue |
1 |
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121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation |
Type |
Journal Article |
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Year |
1994 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
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49 |
Issue |
13 |
Pages |
9091-9096 |
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YBCO films |
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The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface. |
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0163-1829 |
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PMID:10009690 |
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1648 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
Type |
Journal Article |
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Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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49 |
Issue |
2 |
Pages |
355-362 |
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Ge, photothermal ionization, shallow impurities |
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An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Heating of electrons in superconductor in the resistive state due to electromagnetic radiation |
Type |
Journal Article |
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1984 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
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50 |
Issue |
3 |
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207-212 |
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Nb HEB |
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Abstract |
The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields. |
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0038-1098 |
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1709 |
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Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
Type |
Journal Article |
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1989 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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50 |
Issue |
5 |
Pages |
283-286 |
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YBCO HTS films |
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The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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1690 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
Type |
Journal Article |
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Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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50 |
Issue |
4 |
Pages |
728-734 |
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Ge, photoexcited carriers, shallow impurity centers |
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Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Effect of electromagnetic radiation on a superconductor in a magnetic field |
Type |
Conference Article |
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1988 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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52 |
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3 |
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449-451 |
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The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films. |
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Russian |
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0367-6765 |
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4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987 |
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1702 |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
Type |
Journal Article |
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Year |
1982 |
Publication |
Optics and Spectroscopy |
Abbreviated Journal |
Optics and Spectroscopy |
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52 |
Issue |
4 |
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454-455 |
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Ge, exciton photoconduction |
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1715 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
Type |
Journal Article |
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Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
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53 |
Issue |
12 |
Pages |
R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
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We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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no |
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Call Number |
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1612 |
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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
Type |
Journal Article |
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Year |
1997 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume ![sorted by Volume (numeric) field, ascending order (up)](img/sort_asc.gif) |
56 |
Issue |
16 |
Pages |
10089-10096 |
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disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
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Abstract |
The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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