|
Kaganov, M. L., Lifshitz, I. M., & Tanatarov, L. V. (1957). Relaxation between electrons and the crystalline lattice. Sov. Phys. JETP, 4(2), 173–178.
|
|
|
Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
|
|
|
Gershenzon, E. M., & Gol'tsman, G. N. (1971). Transitions of electrons between excited states of donors in germanium. JETP Lett., 14(2), 63–65.
|
|
|
Gershenzon, E. M., Gol'tsman, G. N., Emtsev, V. V., Mashovets, T. V., Ptitsyna, N. G., & Ryvkin, S. M. (1971). Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett., 14(6), 241.
|
|
|
Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1972). Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett., 16(4), 161–162.
|
|