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Ожегов, Р.В.; Окунев, О.В.; Гольцман, Г.Н. |
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Флуктуационная чувствительность сверхпроводящего болометрического смесителя на эффекте разогрева электронного газа |
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2009 |
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Радиотехника |
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3 |
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120-124 |
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смеситель на горячих электронах; флуктуационная чувствительность; тепловизор терагерцевого диапазона частот; hot-electron bolometer mixer; Imaging system; Noise equivalent temperature difference; Heterodyne receiver; Terahertz range |
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Interest in research in the terahertz range is driven by a great number of various applications, where terahertz instruments may play a leading role. To name just a few, such applications include study of the cosmic microwave background radiation and the distribution of the dark matter, medicine, navigation, fire alarm, security systems and environmental monitoring. The paper discusses the possibility of using a receiver based on the hot-electron effect in superconducting films as an imaging system. We present the results of the noise equivalent temperature difference (NETD) measurements performed with a hot-electron bolometer mixer made from a thin superconducting film. The receiver with a noise temperature of ~ 3800 K at a local oscillator frequency of 300 GHz a bandwidth of 500 MHz and an integration time of 1 s has offered an NETD of 0.5 K. We have also developed a technique that enabled us to reduce the contribution of the mixer gain fluctuations to the overall system instability. As of this writing, the above value of the NETD is the lowest value offered for this type of receiver, which indicates the possibility to use such receivers in real-time imaging systems. The technique offered in the paper for achieving the limiting value of the NETD offers an alternative to the phase-locking scheme.
Представены результаты измерения флуктуационной чувствительности (NETD – noise equivalent temperature difference) болометрического смесителя на эффекте разогрева электронного газа в тонких сверхпроводящих пленках. Получено предельное значение NETD, равное 0,5 К, при шумовой температуре приемника 3800 К, ширине полосы преобразования 500 МГц, постоянной времени 1 с и частоте гетеродина 300 ГГц. Разработана методика достижения предельной флуктуационной чувствительности, позволяющая избежать влияния нестабильности коэффициента преобразования смесителя. |
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RPLAB @ gujma @ |
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Khosropanah, Pourya |
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Title |
NbN and NbTiN hot electron bolometer THz mixers |
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2003 |
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Chalmers University of Technology |
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HEB mixer, hot electron bolometer mixer, NbN, NbTiN, superconducting detector, heterodyne receiver, THz mixer, submillimeter mixer, quasioptical receiver, double slot antenna, twin slot antenna, spiral antenna, receiver noise, FTS, Fourier Transform Spectrometer |
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The thesis reports the development of Hot Electron Bolometer (HEB) mixers for radio astronomy heterodyne receivers in THz frequency range. Part of this work is the fabrication of HEB devices, which are based on NbN or NbTiN superconducting thin films (â‰<a4>5 nm). They are integrated with wideband spiral or double-slot planar antennas. The mixer chips are incorporated into a quasi-optical receiver. The experimental part of this work focuses on the characterization of the receiver as a whole, and the HEB mixers as a part. Double side band receiver noise temperature and the IF bandwidth are reported for frequencies from 0.7 THz up to 2.6 THz. The spectrum of the direct response of HEB integrated with dierent antennas are measured using Fourier Transform Spectrometer (FTS). The effect of the bolometer size on total receiver performance and the LO power requirements is also discussed. A high-yield and reliable process for fabrication of NbN HEB mixers have been achieved. Over 100 devices with different bolometer geometry, film property and also different antennas have been fabricated and measured. The measured data enables us to discuss the impact of different parameters to the receiver overall performance.
This work has provided NbN HEB mixers to the following receivers:
TREND (Terahertz REceiver with NbN HEB Device) operating at 1.25-1.5 THz, installed in AST/RO Submillimeter Wave Telescope, Amundsen/Scott South Pole Station, in 2002-2003.
Band 6-low (1.410-1.700 THz) and 6-high (1.700-1.920 THz) of the HIFI (Heterodyne Instrument for Far Infra-red) in the Herschel Space Observatory, due to launch in 2007 by ESA (European Space Agency).
Besides, there has been continuous efforts to develop better models to explain the mixer performance more accurately. They are based on two temperature model for electrons and phonons and solving one-dimensional heat balance equations along the bolometer. The principles of these models are illustrated and the calculated results are compared with measured data. |
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Ph.D. thesis |
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Chalmers University of Technology |
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Göteborg |
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Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. |
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Bandwidth performance of a THz normal metal TiN bolometer-mixer |
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2019 |
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Proc. 30th Int. Symp. Space Terahertz Technol. |
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Proc. 30th Int. Symp. Space Terahertz Technol. |
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102-103 |
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TiN normal metal bolometer, NMB |
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We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. |
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