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Васильева, И. А.; Компанеец, В. В.; Красная, Ж. А.; Чижикова, З. А. |
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Проявление внутримолекулярных вибронных взаимодействий в тонкоструктурных спектрах флуоресценции и возбуждения флуоресценции полиеновых δ-диметиламинокетонов |
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2011 |
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Оптический журнал |
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Опт. ж. |
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78 |
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5 |
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3-8 |
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спектры флуоресценции; вибрационный анализ; адиабатическое гармоническое приближение; бесфононная линия; фононное крыло |
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Проведен вибрационный анализ спектров флуоресценции и возбуждения флуоресценции, полученных методом Шпольского при 4,2 K. Рассчитаны параметры внутримолекулярных взаимодействий двух δ-диметиламинокетонов. Для определения интегральных интенсивностей вибронных полос в спектрах с тонкой структурой на интенсивном сплошном фоне выполнено моделирование спектров путем представления полосы каждого из вибронных переходов бесфононной линией и фононным крылом с определенными параметрами (полуширинами, фактором Дебая–Валлера). Показано, что нарушение зеркальной симметрии в сопряженных спектрах флуоресценции и возбуждения флуоресценции этих двух соединений может быть обÑŠяснено интерференцией франк-кондоновского и герцберг-теллеровского взаимодействий. |
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RPLAB @ gujma @ |
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721 |
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Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. |
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Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices |
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Journal Article |
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2011 |
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Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
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56 |
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6 |
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826-830 |
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GaAs/AlGaAs superlattices |
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The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation. |
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1063-7842 |
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1214 |
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Манова, Н.Н.; Корнеева, Ю.П.; Корнеев, А.А.; Слыш, В.; Воронов, Б.М.; Гольцман, Г.Н. |
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Сверхпроводниковый NbN однофотонный детектор, интегрированный с четвертьволновым резонатором |
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2011 |
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Письма в Журнал технической физики |
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ПЖТФ |
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37 |
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10 |
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7 |
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SSPD |
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Исследована спектральная зависимость квантовой эффективности сверхпроводниковых NbN однофотонных детекторов, интегрированных с оптическими четвертьволновыми резонаторами с использованием диэлектриков Si3N4, SiO2, SiO. |
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RPLAB @ gujma @ |
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637 |
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Manova, N. N.; Korneeva, Yu. P.; Korneev, A. A.; Slysz, W.; Voronov, B. M.; Gol'tsman, G. N. |
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Superconducting NbN single-photon detector integrated with quarter-wave resonator |
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Journal Article |
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2011 |
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Tech. Phys. Lett. |
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Tech. Phys. Lett. |
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37 |
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5 |
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469-471 |
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SSPD, SNSPD |
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The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied. |
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RPLAB @ gujma @ |
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664 |
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Edlmayr, V.; Harzer, T. P.; Hoffmann, R.; Kiener, D.; Scheu, C.; Mitterer, C. |
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Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings |
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Journal Article |
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2011 |
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J. Vac. Sci. Technol. A |
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29 |
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4 |
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8 |
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Annealing |
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The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3. |
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Annealing |
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RPLAB @ gujma @ |
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693 |
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Lee, B. G.; Assefa, S.; Green, W. M. J.; Min Yang; Schow, C. L.; Jahnes, C. V.; Sheng Zhang; Singer, J.; Kopp, V. I.; Kash, J. A.; Vlasov, Y. A. |
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Multichannel high-bandwidth coupling of ultradense silicon photonic waveguide array to standard-pitch fiber array |
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2011 |
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J. Lightwave Technol. |
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29 |
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4 |
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475-482 |
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optical waveguides, from chiralphotonics |
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A multichannel tapered coupler interfacing standard 250-μm-pitch low-numerical-aperture (NA) polarization-maintaining fiber arrays with ultradense 20- μm-pitch high-NA silicon waveguides is designed and fabricated. The coupler is based on an array of 12 dual-core glass waveguides on 250-μ m pitch that are tapered to a 20- μm pitch, simultaneously providing both pitch and spot-size conversion. At the wide end, the inner core matches the NA and mode profile of standard single-mode fiber. When drawn and tapered, the inner core “vanishes†and the outer core, surrounded by the clad, matches the NA and mode profile of the on-chip photonic waveguide. Ultradense high-efficiency coupling to an array of Si photonic waveguides is demonstrated using a 12-channel polarization-maintaining-fiber pigtailed tapered coupler. Coupling to Si waveguides is facilitated using SiON spot-size converters integrated into the Si photonic IC to provide 2-3-μm mode field diameters compatible with the tapered coupler. The tapered coupler achieves <; 1 dB coupling losses to photonic waveguides. Furthermore, eight-channel coupling is shown with less than -35 dB crosstalk between channels. Finally, a 640-Gb/s wavelength-division-multiplexing signal is coupled into four waveguides occupying 80 μm of chip edge, providing 160-Gb/s per-channel bandwidths. |
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849 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. |
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Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements |
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Journal Article |
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2011 |
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Semicond. Sci. Technol. |
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Semicond. Sci. Technol. |
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26 |
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2 |
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025013 |
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AlGaAs/GaAs heterojunctions |
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We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas. |
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0268-1242 |
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1215 |
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Ozhegov, R. V.; Gorshkov, K. N.; Gol'tsman, G. N.; Kinev, N. V.; Koshelets, V. P. |
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The stability of a terahertz receiver based on a superconducting integrated receiver |
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2011 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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24 |
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3 |
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035003 |
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SIS mixer, SIR, stability |
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We present the results of stability testing of a terahertz radiometer based on a superconducting receiver with a SIS tunnel junction as the mixer and a flux-flow oscillator as the local oscillator. In the continuum mode, the receiver with a noise temperature of 95 K at 510 GHz measured over the intermediate frequency (IF) passband of 4-8 GHz offered a noise equivalent temperature difference of 10 ± 1 mK at an integration time of 1 s. We offer a method to significantly increase the integration time without the use of complex measurement equipment. The receiver observed a strong signal over a final detection bandwidth of 4 GHz and offered an Allan time of 5 s. |
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705 |
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Korneeva, Y.; Florya, I.; Semenov, A.; Korneev, A.; Goltsman, G. |
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New generation of nanowire NbN superconducting single-photon detector for mid-infrared |
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2011 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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21 |
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3 |
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323-326 |
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SSPD |
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We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD. |
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Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikov, Sergey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory |
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Ultrawide noise bandwidth of NbN hot-electron bolometer mixers with in situ gold contacts |
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2011 |
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IEEE Trans. Appl. Supercond. |
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21 |
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3 |
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620-623 |
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NbN HEB mixer bandwidth |
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We report a noise bandwidth of 7 GHz in the new generation of NbN hot-electron bolometer (HEB) mixers that are being developed for the space observatory Millimetron. The HEB receiver driven by a 2.5-THz local oscillator offered a noise temperature of 600 K in a 50-MHz final detection bandwidth. As the filter center frequency was swept this value remained nearly constant up to the cutoff frequency of the cryogenic amplifier at 7 GHz. We believe that such a low value of the noise temperature is due to reduced radio frequency (RF) loss at the interface between the superconducting film and the gold contacts. We have also performed gain bandwidth measurements at the superconducting transition on HEB mixers with various lengths and found them to be in excellent agreement with the results of the analytical and numerical models developed for the HEB mixer with both diffusion and phonon cooling of hot electrons. |
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